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Growth of Nano Crystalline Diamond on Silicon Substrate Using Different Etching Gases by HFCVD
Z. Khalaj,M.Ghoranneviss*,S.Nasiri laheghi,Z.Ghorannevis,R.Hatakeyama
Author NameAffiliationE-mail
Z. Khalaj Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, Tehran, Iran  
M.Ghoranneviss* Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, Tehran, Iran Ghoranneviss@gmail.com 
S.Nasiri laheghi Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, Tehran, Iran  
Z.Ghorannevis Department of Electronic Engineering, Tohoku University, Sendai 980-8579, Japan  
R.Hatakeyama Department of Electronic Engineering, Tohoku University, Sendai 980-8579, Japan  
Abstract:
We investigate the effects of etching gases on the synthesis of nano crystalline diamonds grown on silicon substrate at the substrate temperature of 550 oC and the reaction pressure of 4 kPa by hot filament chemical vapor deposition method, in which CH4 and H2 act as a source and diluting gases, respectively. N2, H2, and NH3 were used as the etching gases, respectively. Results show that the optimum conditions can be obtained only for the case of H2 gas. The crystal morphology and crystallinity of the samples have been examined by scanning electron microscopy and X-ray diffraction, respectively.
Key words:  Nano crystalline diamond, Etching gas, Hot filament chemical vapor deposi-tion
FundProject:
硅衬底上纳米晶金刚石生长
Z. Khalaj,M.Ghoranneviss*,S.Nasiri laheghi,Z.Ghorannevis,R.Hatakeyama
摘要:
研究了蚀刻气体对生长在硅衬底上纳米晶金刚石合成的影响.合成方法为热丝化学气相沉积法,衬底温度为550 oC,反应压力为4 kPa. 其中甲烷和氢气分别作为源气体和稀释气体. 氮气、氢气和氨气用作蚀刻气体. 结果表明,仅氢气作为蚀刻气体可获得最佳工艺条件.
关键词:  纳米晶金刚石,蚀刻气体,热丝化学气相沉积
DOI:10.1088/1674-0068/23/06/689-692
分类号: