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Metal Precursor Influence on Performance of CuIn1-xGaxSe2 Films
Man Wang,Zhong-wei Zhang,Guo-shun Jiang,Chang-fei Zhu*
Author NameAffiliationE-mail
Man Wang CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engi- neering, University of Science and Technology of China, Hefei 230026, China  
Zhong-wei Zhang CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engi- neering, University of Science and Technology of China, Hefei 230026, China  
Guo-shun Jiang CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engi- neering, University of Science and Technology of China, Hefei 230026, China  
Chang-fei Zhu* CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engi- neering, University of Science and Technology of China, Hefei 230026, China cfzhu@ustc.edu.cn 
Abstract:
CuIn1-xGaxSe2 (CIGS) films were prepared by a two-stage method, in which Cu-In-Ga metallic precursors were firstly deposited on unheated Mo-coated soda lime glass substrates by direct current sputtering CuGa (20%Ga) and radio frequency sputtering In targets in an Ar atmosphere, followed by selenization at 520 oC for 40 min in Se vapor. By adjust-ing the sputtering thickness ratio of surface CuGa (20%Ga) and bottom CuGa (20%Ga) alloy layers in metal precursor, different CIGS thin films were fabricated. Through X-ray diffraction spectra, Raman spectra, local energy dispersive spectrometer, planar- and cross-sectional views of scanning electron microscopy measurements, it revealed that the CIGS thin films from selenization of metal precursor with CuGa:In:CuGa thickness ratio of 7:20:3 (sample-2-se) was of chalcopyrite structure with the preferred (112) orientation, and the grains sizes ranged from 0.5 μm to 2 μm, and sample-2-se had no binary compound phase of In-Se and order defect compound phase. Consequently, the results of illuminated current-voltage curve and quantum efficiency measurements showed that the CIGS film device made from sample-2-se had relative higher photo-electric conversion efficiency (3.59%) and good spectrum response.
Key words:  CuIn1-xGaxSe2 thin film, Sputtering, X-ray diffraction, Raman, Scanning electron microscopy, Quantum efficiency
FundProject:
Metal Precursor Influence on Performance of CuIn1-xGaxSe2 Films
王满,张中伟,江国顺,朱长飞*
摘要:
在镀有Mo的纳钙玻璃衬底上顺序溅射沉积CuGa/In/CuGa层,然后在真空下520 oC硒化40 min,制备成CIGS薄膜. 通 过调整预制层的底层和表层的溅射沉积CuGa层的厚度比,制备不同的CIGS薄膜. 通过X射线衍射谱、拉曼谱、电子能谱、平面和断面SEM的分析, 揭示出CIGS薄膜是黄铜矿相的结构, 晶粒0.5~2 μm,且由硒化CuGa/In/CuGa厚度比为7:20:3的金属预制层后的CIGS薄膜的结晶性最好. 拉曼光谱表明,没有In-Se二元化合物相和有序缺陷化合物相.
关键词:  CIGS薄膜,溅射,I-V ,量子效率
DOI:10.1088/1674-0068/23/03/363-367
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