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Large Scale Homogeneous Growth Mechanics of Microcrystalline Silicon Films on Rough Surface
Wen-feng Zhao,Jun-fang Chen*,Yan Wang,Ran Meng,Yi-ran Zhao,Shi-yun Shao,Ji-yun Li,Yun Zhang
Author NameAffiliationE-mail
Wen-feng Zhao School of Physics and Telecommunication Engineering, Laboratory of Quantum Information Tech-nology, South China Normal University, Guangzhou 510006, China College of Engineering, South China Agricultural University, Guangzhou 510642, China chenjf@scnu.edu.cn 
Jun-fang Chen* School of Physics and Telecommunication Engineering, Laboratory of Quantum Information Tech-nology, South China Normal University, Guangzhou 510006, China chenjf@scnu.edu.cn 
Yan Wang School of Physics and Telecommunication Engineering, Laboratory of Quantum Information Tech-nology, South China Normal University, Guangzhou 510006, China chenjf@scnu.edu.cn 
Ran Meng School of Physics and Telecommunication Engineering, Laboratory of Quantum Information Tech-nology, South China Normal University, Guangzhou 510006, China chenjf@scnu.edu.cn 
Yi-ran Zhao School of Physics and Telecommunication Engineering, Laboratory of Quantum Information Tech-nology, South China Normal University, Guangzhou 510006, China chenjf@scnu.edu.cn 
Shi-yun Shao School of Physics and Telecommunication Engineering, Laboratory of Quantum Information Tech-nology, South China Normal University, Guangzhou 510006, China chenjf@scnu.edu.cn 
Ji-yun Li College of Engineering, South China Agricultural University, Guangzhou 510642, China chenjf@scnu.edu.cn 
Yun Zhang College of Engineering, South China Agricultural University, Guangzhou 510642, China chenjf@scnu.edu.cn 
Abstract:
Large scale homogenous growth of microcrystalline silicon (μc-Si:H) on cheap substrates by inductively coupled plasma (ICP) of Ar diluted SiH4 has been studied. From XRD and Raman spectrum, we find that substrates can greatly affect the crystalline orientation, and the μc-Si:H films are comprised of small particles. Thickness detection by surface profilom-etry shows that the thin μc-Si:H films are homogenous in large scale. Distributions of both ion density and electron temperature are found to be uniform in the vicinity of substrate by means of diagnosis of Langmuir probe. Based on these experimental results, it can be proposed that rough surfaces play important roles in the crystalline network formation and Ar can affect the reaction process and improve the characteristics of μc-Si:H films. Also, ICP reactor can deposit the thin film in large scale.
Key words:  Microcrystalline silicon film, Inductively coupled plasma, Rough surface
FundProject:
微晶硅薄膜在粗糙表面的大面积均匀生长机制在
赵文锋,陈俊芳*,王燕,孟然,赵益冉,邵士运,李继宇,张宇
摘要:
用氩气稀释硅烷作为反应气体,利用感应耦合等离子体在廉价衬底上大面积均匀沉积微晶硅薄膜.X射线衍射和拉曼分析表明衬底能显著地影响晶向,且微晶硅薄膜由小晶粒组成.台阶仪测试表明,微晶硅薄膜具有大范围均匀的特点.探针分析表明衬底附近区域的离子密度及电子温度分布均匀.基于以上结果可知:粗糙表面在晶体结构形成具有重要的作用,电感耦合等离子体反应器可以大面积均匀沉积薄膜.此外,氩气能影响反应过程并提高微晶硅薄膜特性.
关键词:  微晶硅薄膜,电感耦合等离子体,粗糙表面
DOI:10.1088/1674-0068/23/04/447-450
分类号: