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Ag Deposition Forms and Uniformity on Porous Silicon by Electrochemical Method
Xiao-lan Song*,Da-yu Xu,Hai-ping Yang,Zhen-xing Yu,Guan-zhou Qiu
Author NameAffiliationE-mail
Xiao-lan Song* School of Minerals Processing and Bioengineering, Central South University, Changsha 410083,China xlsong@hnu.cn 
Da-yu Xu Zhengzhou Research Institute of Chalco, Zhengzhou 450041, China  
Hai-ping Yang School of Metallurgical Science and Engineering, Central South University, Changsha 410083, China  
Zhen-xing Yu School of Minerals Processing and Bioengineering, Central South University, Changsha 410083,China  
Guan-zhou Qiu School of Minerals Processing and Bioengineering, Central South University, Changsha 410083,China  
Abstract:
The electrochemical deposition technique was applied to achieve porous silicon (PS) surface passivated with Ag deposition for improving the properties of PS photoluminescence. The relation of Ag depositing forms to current density and the effect of PS hydrophilic surface on deposition uniformity were investigated. The experimental results indicated that there were two critical current densities (maximum and minimum) in which Ag was absent and electroplated on PS surface correspondingly, and the range of current density for deposition of Ag on porous silicon was from 50 μA/cm2 to 400 μA/cm2. The process of changing PS surface from hydrophobic into hydrophilic had positive effect on Ag deposition uniformity. Under the same experimental conditions, PS hydrophobic surface presented uneven Ag deposition.However, hydrophilic surface treated with SC-1 solution was even. Finally, the effect of PS surface passivation with Ag even deposition on photoluminescence intensity and stabilization of PS was studied. It was discovered that Ag passivation inhibited the degradation of PL intensity effectively. In addition, excessive Ag deposition had a quenching effect on room-temperature visible photoluminescence of PS.
Key words:  Porous silicon, Photoluminescence, Hydrophilic process, Ag deposition, Passi-vation
FundProject:
Ag Deposition Forms and Uniformity on Porous Silicon by Electrochemical Method
宋晓岚*,徐大余,杨海平,喻振兴,邱冠周
摘要:
采用电化学沉积Ag的方法对多孔硅表面进行钝化改善其发光性能,探讨了沉积电流密度大小与沉积Ag的形式以及多孔硅表面亲水性处理对沉积Ag均匀性的影响. 结果表明,改变沉积电流密度大小后出现了两个临界电流密度,即不发生Ag沉积和在PS表层形成Ag电镀,深入PS孔道内沉积Ag的电流密度范围为50~400 A/cm2;多孔硅表面亲水性处理对沉积Ag均匀性有积极作用,在相同的实验条件下,未经表面亲水性处理的疏水多孔硅表面沉积Ag不均匀,而经过SC-1溶液处理后的亲水多孔硅表面上沉积Ag分布较均匀. 进一步研究了均匀沉积Ag钝化处理对PS的光致发光强度和稳定性的影响,证明采用Ag钝化处理能有效地抑制发光强度的衰减;而过量的Ag沉积会使PS发生荧光猝灭现象.
关键词:  多孔硅,光致发光,亲水性处理,银沉积,钝化
DOI:10.1088/1674-0068/23/02/211-216
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