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Growth Kinetics of Silicon Carbide Film Prepared by HeatingPolystyrene/Si(111)
Jian-wen Wang,Yu-xia Wang *,Zheng Chen,You-ming Zou
Author NameAffiliationE-mail
Jian-wen Wang Department of Materials Science and Engineering, University of Science and Technology of China,Hefei 230026, China  
Yu-xia Wang * Department of Materials Science and Engineering, University of Science and Technology of China,Hefei 230026, China wyxm@ustc.edu.cn 
Zheng Chen Department of Materials Science and Engineering, University of Science and Technology of China,Hefei 230026, China  
You-ming Zou Department of Materials Science and Engineering, University of Science and Technology of China,Hefei 230026, China  
Abstract:
SiC films were prepared by heating polystyrene/Si(111) in normal pressure argon atmosphere at different temperatures. The films were investigated by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy and Fourier transform infrared absorption measurements. The thicknesses of SiC films were calculated from FTIR spectra. The growth kinetics of the growth process of SiC films were investigated as well. The thicknesses of the SiC films grown for 1 h with increasing growth temperatures have different trends in the three temperature ranges: increasing slowly (1200-1250 oC), increasing quickly (1250-1270 oC), and decreasing (1270-1300 oC). The apparent activation energies of the growth process of SiC films in the three ranges were calculated to be 122.5, 522.5, and -127.5 J/mol respectively. Mechanisms of the different growth processes were discussed. The relation between film thicknesses and growth temperatures indicated that the growth process was a 2D mechanism in the first range and 3D mechanism in the second range. In the third range, the thicknesses of SiC films were decreased by the volatility of Si and C atoms.
Key words:  Thin films, Silicon carbide, Fourier transform infrared absorption, Growth kinetics
FundProject:
Growth Kinetics of Silicon Carbide Film Prepared by HeatingPolystyrene/Si(111)
王建文,王玉霞 *,陈征,邹优鸣
摘要:
在不同的温度下热处理用sol-gel法制的PS/Si(111)叠层凝胶膜制备出了SiC薄膜.用XRD、SEM、XPS、FTIR等分析方法研究了SiC薄膜的结构、组成和表面形貌等.根据FTIR光谱计算了不同温度下得到的SiC薄膜的厚度,并研究了PS/Si(111)热解法生长SiC薄膜的生长动力学.结果表明,随着生长温度的增加,SiC薄膜生长速率变化趋势为:1200~1250 oC生长速率增加缓慢是2D生长机制,1250~1270 oC生长速率快速增加是3D生长机制,1270~1300 oC生长速率为负增长是由于SiC薄膜生长与Si和C原子的挥发共同作用所致.由速率变化求得各段表观生长激活能分别是122.5、522.5、-127.5 J/mol.
关键词:  薄膜,碳化硅,傅里叶红外光谱,生长动力学
DOI:10.1088/1674-0068/22/01/102-106
分类号: