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Pulsed Laser Deposition ZnS Buffer Layers for CIGS Solar Cells
Pai-feng Luo,Guo-shun Jiang,Chang-fei Zhu *
Author NameAffiliationE-mail
Pai-feng Luo Laboratory of Advanced Functional Materials and Devices, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, China;Department of Materials Science and Engineering, Hefei University of Technology, H  
Guo-shun Jiang Laboratory of Advanced Functional Materials and Devices, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, China  
Chang-fei Zhu * Laboratory of Advanced Functional Materials and Devices, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, China cfzhu@ustc.edu.cn 
Abstract:
Polycrystalline ZnS films were prepared by pulsed laser deposition (PLD) on quartz glass substrates under different growth conditions at different substrate temperatures of 20, 200,400, and 600 oC, which is a suitable alternative to chemical bath deposited (CBD) CdS as a buffer layer in Cu(In,Ga)Se2 (CIGS) solar cells. X-ray diffraction studies indicate the films are polycrystalline with zinc-blende structure and they exhibit preferential orientation along the cubic phase β-ZnS (111) direction, which conflicts with the conclusion of wurtzite structure by Murali that the ZnS films deposited by pulse plating technique was polycrystalline with wurtzite structure. The Raman spectra of grown films show A1 mode at approximately 350 cm-1, generally observed in the cubic phase β-ZnS compounds. The planar and the cross-sectional morphology were observed by scanning electron microscopic. The dense,smooth, uniform grains are formed on the quartz glass substrates through PLD technique.The grain size of ZnS deposited by PLD is much smaller than that of CdS by conventional CBD method, which is analyzed as the main reason of detrimental cell performance. The composition of the ZnS films was also measured by X-ray fluorescence. The typical ZnS films obtained in this work are near stoichiometric and only a small amount of S-rich. The energy band gaps at different temperatures were obtained by absorption spectroscopy measurement,which increases from 3.2 eV to 3.7 eV with the increasing of the deposition temperature.ZnS has a wider energy band gap than CdS (2.4 eV), which can enhance the blue response of the photovoltaic cells. These results show the high-quality of these substitute buffer layer materials are prepared through an all-dry technology, which can be used in the manufacture of CIGS thin film solar cells.
Key words:  ZnS thin films, Pulsed laser deposition, Chemical bath deposition, Buffer layer
FundProject:
Pulsed Laser Deposition ZnS Buffer Layers for CIGS Solar Cells
罗派峰,江国顺,朱长飞 *
摘要:
采用脉冲激光沉积(PLD)技术,在20、200、400和600 oC下制备出了高质量的ZnS薄膜.XRD分析结果表明,PLD法制备的ZnS多晶薄膜为立方闪锌矿结构而并非Murali报道的六方的纤锌矿结构,并沿(111)方向择优取向生长.Raman光谱进一步证明了在350 cm-1出现了立方相ZnS薄膜的A1振动模式.通过ZnS薄膜的SEM平面和断面图可观察到采用PLD技术生长出了非常密实、光滑、均匀的薄膜.PLD生长的ZnS薄膜的颗粒远小于化学浴沉积的CdS颗粒,这也是影响其电池效率的主要原因.XRF化学组成分析结果表明ZnS薄膜符合化学计量比,但略微富S.最后通过光吸收谱测得不同温度下的ZnS薄膜的光学带隙在3.2~3.7 eV,并随薄膜沉积温度的升高,光学带隙反而增加.采用宽带隙的ZnS缓冲层材料,与CdS(2.4 eV)相比,可以增加电池蓝波段的响应.
关键词:  ZnS薄膜,脉冲激光沉积,化学浴沉积,缓冲层
DOI:10.1088/1674-0068/22/01/97-101
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