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Chloride Assisted Growth of Aluminum Nitride Nanobelts and Their Enhanced Dielectric Responses
Ting Xie*,Min Ye,Zhi Jiang,Yong Qin,Yu-cheng Wu,Guo-wen Meng,Li-de Zhang
Author NameAffiliationE-mail
Ting Xie* Institute of Tribology, Hefei University of Technology, Hefei 230009, ChinaKey Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences,Hefei 230031, China txie@yahoo.cn 
Min Ye Institute of Tribology, Hefei University of Technology, Hefei 230009, ChinaKey Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences,Hefei 230031, China  
Zhi Jiang Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China  
Yong Qin Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China  
Yu-cheng Wu Institute of Tribology, Hefei University of Technology, Hefei 230009, ChinaKey Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences,Hefei 230031, China  
Guo-wen Meng Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China  
Li-de Zhang Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China  
Abstract:
Aluminum nitride (AlN) nanobelts were successfully synthesized in high yield through a chloride assisted vapor-solid process. X-ray diffraction, transmission electron microscopy, and selected area electronic diffraction demonstrate that the as-prepared nanobelts are pure, structurally uniform and single crystalline, and can be indexed to hexagonal wurtzite structure. The micro observations show that there exist no defects in the obtained nanobelts. The growth direction of the nanobelts is along [0001]. The frequency spectra of the relative dielectric constant and of the dielectric loss were measured in the frequency range of 50 Hz to 5 MHz. Analysis of these spectra indicates that the interface in samples has great influence on the dielectric behavior of samples. As compared with AlN micropowders, AlN nanobelts have much higher relative dielectric constant, especially at low frequencies at room temperature.
Key words:  Aluminum nitride, Nanobelt, Chloride assisted growth, Dielectric property
FundProject:
Chloride Assisted Growth of Aluminum Nitride Nanobelts and Their Enhanced Dielectric Responses
解挺*,叶敏,姜治,秦勇,吴玉程,孟国文,张立德
摘要:
通过氯化物辅助的气-固生长方法成功地制备出了大量单晶的氮化铝纳米带. X射线衍射、透射电子显微镜以及选区衍射分析表明,所制备的纳米带是纯度高、结构均匀的单晶体,并具有六方的晶体结构. 显微观察表明所获得的氮化铝纳米带没有缺陷,其生长方向为[0001]方向. 测量了产物在50 Hz 到5 MHz范围内的介电频谱,谱图分析表明样品中的界面对样品的介电特性有很大的影响. 室温条件下,与氮化铝微米粉相比,氮化铝纳米带的介电常数高得多,并在低频情况下尤为显著.
关键词:  氮化铝,纳米带,氯化物辅助的气-固生长,介电特性
DOI:10.1088/1674-0068/21/06/586-590
分类号: