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Ferroelectric and Pyroelectric Properties of Highly (111)-oriented Nanocrystalline Pb(Zr0:95Ti0:05)O3 Thin Films
Qiu-xiang Liu*, Xin-gui Tang, Yan-ping Jiang, H. L. W. Chan
Author NameAffiliationE-mail
Qiu-xiang Liu* School of Physics Optoelectric Engineering, Guangdong University of Technology, Guangzhou Higher Education Mega Center, Guangzhou 510006, China; Key Lab of Low Dimensional Materials & Application Technology, Xiangtan University, Ministry of Education, Xi liuqiuxiang2002@yahoo.com.cn 
Xin-gui Tang School of Physics Optoelectric Engineering, Guangdong University of Technology, Guangzhou Higher Education Mega Center, Guangzhou 510006, China; Key Lab of Low Dimensional Materials & Application Technology, Xiangtan University, Ministry of Education, Xi  
Yan-ping Jiang School of Physics Optoelectric Engineering, Guangdong University of Technology, Guangzhou Higher Education Mega Center, Guangzhou 510006, China; Key Lab of Low Dimensional Materials & Application Technology, Xiangtan University, Ministry of Education, Xi  
H. L. W. Chan Department of Applied Physics and Materials Research Centre, Hong Kong Polytechnic University,Kowloon, Hong Kong, China  
Abstract:
"Lead zirconate titanate Pb(Zr0:95Ti0:05)O3 (PZT95/5) antiferroelectric thin films with 300 nm thickness were grown on Pt/Ti/SiO2/Si substrates by a sol-gel method with rapid thermal annealing processing. The X-ray diffraction results showed that the highly (111)-oriented pervoskite PZT95/5 thin films were grown on Pt/Ti/SiO2/Si substrates when annealed at 600-700 oC. Electrical measurements were conducted on PZT95/5 films in metal-ferroelectric-metal capacitor configuration. The PZT95/5 thin films annealed at 600-700 oC showed well-saturated hysteresis loops at an applied voltage of 20 V. At 1 kHz, the dielectric constant and dielectric loss of the films were 519 and 0.028, 677 and 0.029, 987 and 0.025, respectively for the thin films annealed at 600, 650, and 700 oC. The average remanent polarization (Pr) and the coercive electric field (Ec) obtained from the P-E hysteresis loops, were 19.1 1C/cm2 and 135.6 kV/cm, 29.31C/cm2 and 88.57 kV/cm, 45.3 1C/cm2 and 102.1 kV/cm, respectively for PZT95/5 thin films annealed at 600, 650 and 700 oC for 10 min in the oxygen atmosphere. This showed a good ferroelectricity of the prepared PZT95/5 films on Pt/Ti/SiO2/Si substrates by the simple sol-gel processing. The pyroelectric coeocient (p) of antiferroelectric PZT95/5 films was measured by a dynamic technique. At room temperature, the p values of the antiferroelectric PZT95/5 films at 1 kHz were 274, 238, and 212 1C/m2K."
Key words:  PZT95/5 film, Antiferroelectric, Ferroelectric property, Pyroelectric coefficient, Sol-gel
FundProject:
(111)取向生长Pb(Zr0:95Ti0:05)O3纳米晶薄膜的铁电与热释电特性
刘秋香*,唐新桂,蒋艳平,陈王丽华
摘要:
" 在Pt/Ti/SiO2/Si基片上用溶胶-凝胶法与快速退火工艺制备了300 nm厚的锆钛酸铅Pb(Zr0:95Ti0:05)O3 (PZT95/5)反铁电薄膜.结果显示600~700 ℃晶化处理的钙钛矿PZT95/5薄膜具有高度(111)取向生长特性.薄膜的电性能测量采用金属-铁电-金属电容器结构.在20 V电压作用下,600~700 ℃晶化处理的PZT95/5薄膜显示出饱和电滞回线.在1 kHz下,600、650和700 ℃晶化的薄膜介电常数与损耗分别为519与0.028、677与0.029、987
关键词:  PZT95/5薄膜,反铁电,介电特性,热释电特性,溶胶-凝胶
DOI:10.1088/1674-0068/20/06/763-767
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