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| Field Emission Properties of Multi-walled Carbon Nanotubes Grown on Silicon Nanoporous Pillar Array |
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Wei-fen Jiang*1, Long-yu Li2, Shun-hua Xiao2, Xiao-hui Yang1, Min Jia1, Xin-jian Li2
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1.Department of Mathematics and Information Science, North China Institute of Water Conservancy and Hydroelectric Power, Zhengzhou 450011, China;2.Department of Physics and Laboratory of Materials Physics, Zhengzhou University, Zhengzhou 450052, China
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| Abstract: |
| "Multi-walled carbon nanotubes (CNTs) were grown on a silicon nanoporous pillar array (Si-NPA) by thermal chemical vapor deposition. Surface morphologies and microstructure of the resultant were studied by a field emission scanning electron microscope, Raman spectrum, transmission electron microscope, and highresolution transmission electron microscopy. The composition of samples was determined by energy dispersive X-ray spectroscopy (EDS). The results showed that a great deal of CNTs, with diameter in the range of 20-70 nm, incorporated with Si-NPA and a large scale nest array of CNTs/Si-NPA (NACNT/Si-NPA) was formed. EDS analysis showed that the composition of carbon nanotubes was carbon. Field emission measurements showed that a current density of 5 mA/cm2 was obtained at an electric field of 4.26 V/1m, with a turn-on field of 1.3 V/1m. The enhancement factor calculated according to the Fowler-Nordheim theory was ?11,000. This excellent field emission performance is attributed to the unique structure and morphology of NACNT/Si-NPA, especially the formation of a nest-shaped carbon nanotube array. A schematic drawing that illustrates the experimental configuration is given. These results indicate that NACNT/Si-NPA might be an ideal candidate cathode for potential applications in flat panel displays." |
| Key words: Electron field emission, Carbon nanotube, Silicon nanoporous pillar array, Chemical vapor deposition |
| FundProject: |
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| 碳纳米管/硅纳米孔柱阵列的场发射性能 |
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姜卫粉*1, 李隆玉2, 肖顺华2, 杨晓辉1, 贾敏1, 李新建2
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1.华北水利水电学院数学与信息科学学院，郑州450011;2.郑州大学物理工程学院材料物理实验室，郑州450052
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| 摘要: |
| "通过热化学气相沉积的方法将碳纳米管生长到硅纳米孔柱阵列衬底上．采用场发射扫描电子显微镜、透射电子显微镜、高分辨透射电子显微镜、拉曼光谱和X射线能谱对所制备的样品形貌、组成进行了分析．结果发现：所制备产物为一种具有面积大、准周期性的碳纳米管/硅巢状阵列复合结构．能谱分析表明碳纳米管仅含有碳元素．对样品进行场发射性能测试表明该结构开启电压为1.3 MV/m，当外加电压为4.26 MV/m，发射电流为5 mA/cm2．由FN公式计算相应的场增强因子约为1.1￡104．碳纳米管/硅纳米孔柱阵列好的场发射性能被归 |
| 关键词: 场发射，碳纳米管，硅纳米孔柱阵列，化学气相沉积 |
| DOI：10.1088/1674-0068/20/06/701-705 |
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