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Dielectric and Pyroelectric Properties of Compositionally Graded Pb(Zr1-xTix)O3 Thin Films Prepared by Sol-gel Process
Xin-gui Tang*, Li-li Jiang, Shu-juan Kuang, Ai-li Ding, H. L. W. Chan
Author NameAffiliationE-mail
Xin-gui Tang* School of Physics and Optoelectric Engineering, Guangdong University of Technology, GuangzhouHigher Education Mega Center, Guangzhou 510006, China xgtang@gdut.edu.cn 
Li-li Jiang Laboratory Teaching Center, Guangdong University of Technology, Guangzhou Higher Education Mega Center, Guangzhou 510006, China  
Shu-juan Kuang School of Physics and Optoelectric Engineering, Guangdong University of Technology, GuangzhouHigher Education Mega Center, Guangzhou 510006, China  
Ai-li Ding Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China  
H. L. W. Chan Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China  
Abstract:
"Compositionally graded ferroelectric lead zirconate titanate Pb(Zr1-xTix)O3 (PZT) thin films were grown on Pt/Ti/SiO2/Si substrates by using a sol-gel process. The final structure consists of six layers, up-graded graded films starting from PbZrO3 on the Pt electrode to the top PZT(50) layer, it consists of no Ti, 10%Ti, 20%Ti, 30%Ti, 40%Ti, and 50%Ti respectively. Whereas films with opposite gradient are called down-graded graded films. Structure and dielectric properties of the graded films was investigated by X-ray diffraction, Auger electron spectroscopy and by impedance analysis. The up-graded and down-graded PZT films annealed at 600 o, exhibited the remanent polarization values of 18.0 and 24.2 1C/cm2, respectively. The typical small signal dielectric constants and loss tanffi at a frequency of 100 Hz were 523 and 0.018, 544, and 0.020, respectively, for up-graded and down-graded PZT thin films. The temperature dependence of pyroelectric coeoients of the graded PZT films was measured by a dynamic technique. From 20 o to 82 o, the pyroelectric coeoients of the up-graded and down-graded PZT films up to 374 and 407 1C/m2K, respectively."
Key words:  Graded films, Pb(Zr,Ti)O3, Dielectric properties, Pyroelectric properties
FundProject:
溶胶-凝胶法制备Pb(Zr1?xTix)O3复合梯度薄摸以及介电与热释电特性
唐新桂*,蒋力立,匡淑娟,丁爱丽,陈王丽华
摘要:
"在Pt/Ti/SiO2/Si基片上用溶胶-凝胶法生长制备了PZT(Pb(Zr1-xTix)O3)复合梯度铁电薄膜. 薄膜最终结构由6层组成,"向上""梯度薄膜在Pt底电极上的第一层从PbZrO3开始,顶层是PZT(50/50),即第一层是PbZrO3,第二层PZT90/10 (10%Ti),第三层是PZT80/20,第四层PZT70/30,第五层PZT60/40,第六层PZT50/50.每一层与此相反的是"向下""梯度PZT薄膜.用X射线衍射、俄歇电子能谱和阻抗分析来研究梯度薄膜的结构与介电特性.600
关键词:  梯度薄摸,Pb(Zr,Ti)O3,介电特性,热释电特性
DOI:10.1088/1674-0068/20/06/665-669
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