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Growth and Chemical Thermodynamics Analysis of SiC Film on Si Substrate by Heating Polystyrene/Silica Bilayer Method
Yun Li ,Yu-xia Wang*,Zheng Chen,Jian-wen Wang,You-ming Zou
Author NameAffiliationE-mail
Yun Li Department of Material Science and Engineering, University of Science and Technology of China, Hefei 230026, China  
Yu-xia Wang* Department of Material Science and Engineering, University of Science and Technology of China, Hefei 230026, China wyxm@ustc.edu.cn 
Zheng Chen Department of Material Science and Engineering, University of Science and Technology of China, Hefei 230026, China  
Jian-wen Wang Department of Material Science and Engineering, University of Science and Technology of China, Hefei 230026, China  
You-ming Zou Department of Material Science and Engineering, University of Science and Technology of China, Hefei 230026, China  
Abstract:
SiC films were prepared by modified heating polystyrene/silica bilayer method on Si (111) substrate in normal pressure flowing Ar ambient at 1300 o C. The films were investigated by Fourier transform infrared absorption, X-ray diffraction, and scanning electron microscopy measurements. The chemical thermodynamics process is discussed. The whole reaction can be separated into four steps. The carburizing of SiO is the key step of whole reaction. The main reaction-sequence is figured out based on Gibbs free energy and equilibrium constant. Flowing Ar is necessary to continue the progress of whole reaction by means of carrying out accumulating gaseous resultants. The film is very useful for application in a variety of MOS-based devices for its silica/SiC/Si(111) structure, in which the silica layer can be removed thoroughly by the standard RCA cleaning process.
Key words:  Thin films, Heat treatment, Silicon carbide, Chemical thermodynamics, Silicon monoxide
FundProject:国家自然科学基金
Growth and Chemical Thermodynamics Analysis of SiC Film on Si Substrate by Heating Polystyrene/Silica Bilayer Method
李赟,王玉霞*,陈征,王建文,邹优鸣
摘要:
采用改进的PS/OCS/Si(111)叠层热解法,在石英高温管式炉中,常压流通Ar气氛下,于1300 o C制备出了无层错空洞缺陷的晶态SiC薄膜.采用红外、X射线衍射和扫描电镜等分析方法对薄膜样品进行了表征.并研究了这种方法制备SiC薄膜的化学热力学过程.通过对反应平衡常数和吉布斯自由能的计算,初步确定了生成SiC的主反应的发生顺序以及反应体系的平衡状态,并论证了流通的Ar气氛对于反应的持续进行是必须的.该方法制备的薄膜为SiO2/SiC/Si(111)结构,这种结构对于半导体MOS器件的应用是非常有利的.该SiO2层形成反应后期降温阶段,并且可以通过RCA清洗工艺(标准半导体清洗工艺)彻底清除.目前还没有发现用这种方法生长SiC薄膜的报道.
关键词:  薄膜,热处理,碳化硅,化学热力学,一氧化硅
DOI:10.1088/1674-0068/21/02/151-155
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