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Growth Mechanism and Characterization of Single-crystalline Ga-doped SnO2 Nanowires and Self-organized SnO2/Ga2O3 Heterogeneous Microcomb Structures
Yong Su*,Liang Xu,Xue-mei Liang,Yi-qing Chen
Author NameAffiliationE-mail
Yong Su* a. School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009, China; b. Hefei General Machinery Research Institute, Hefei 230031, China suyong1963@126.com 
Liang Xu School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009, China; Hefei General Machinery Research Institute, Hefei 230031, China  
Xue-mei Liang School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009, China  
Yi-qing Chen School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009, China  
Abstract:
Single-crystalline Ga-doped SnO2 nanowires and SnO2:Ga2O3 heterogeneous microcombs were synthesized by a simple one-step thermal evaporation and condensation method. They were characterized by means of X-ray powder diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), energy-dispersive X-ray spectroscopy (EDS), transmission electron microscopy (TEM) and selected-area electron diffraction (SAED). FE-SEM images showed that the products consisted of nanowires and microcombs that represent a novel morphology. XRD, SAED and EDS indicated that they were single-crystalline tetragonal SnO2. The influence of experimental conditions on the morphologies of the products is discussed. The morphology of the product showed a ribbon-like stem and nanoribbon array aligned evenly along one or both side of the nanoribbon. It was found that many Ga2O3 nanoparticles deposited on the surface of the microcombs. The major core nanoribbon grew mainly along the [110] direction and the self-organized branching nanoribbons grew epitaxially along [1110] or [1110] orientation from the (110) plane of the stem. A growth process was proposed for interpreting the growth of these remarkable SnO2:Ga2O3 heterogeneous microcombs. Due to the heavy doping of Ga, the emission peak in photoluminescence spectra has red-shifted as well as broadened significantly.
Key words:  Microcomb, Nanoribbon, Photoluminescence
FundProject:
Growth Mechanism and Characterization of Single-crystalline Ga-doped SnO2 Nanowires and Self-organized SnO2/Ga2O3 Heterogeneous Microcomb Structures
苏勇*,徐亮,梁雪美,陈翌庆
摘要:
Ga掺SnO2单晶纳米线和SnO2/Ga2O3自组织异质微米梳是通过简单的热蒸发沉淀法一步制得的,并通过X射线粉末衍射(XRD)、场激发扫描电子显微镜(FE-SEM)、透射电子显微镜(TEM)、X射线能量散射谱仪(EDS)、选区电子衍射谱(SAED)进行表征.从FE-SEM的图片上可以看出生成的产物具有纳米线和一种新的微米梳状形貌.XRD、SAED和EDS显示他们是单晶四角形的SnO2.产物的主干呈带状,纳米带阵列均匀的分布在主干的一侧或两侧.大量的Ga2O3纳米颗粒沉积在微米梳的表面.主干纳米带主要沿着[100]方向生长, 自组织的纳米带分支则在主干的(100)面上沿着[110]或者[110]方向生长.由于Ga的大量掺杂,光致发光谱的衍射峰发生红移并严重变宽.针对SnO2:Ga2O3异质微米梳的生长过程进行了解释,并讨论了实验条件对形貌的影响.
关键词:  微米梳,纳米带,光致发光
DOI:10.1088/1674-0068/21/02/181-186
分类号: