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铜铟铝硒硫薄膜的低成本非真空混合法制备
刘兆范,夏伟,袁晨辰,罗派峰*
作者单位E-mail
刘兆范 合肥工业大学材料科学与工程学院合肥230009  
夏伟 合肥工业大学材料科学与工程学院合肥230009  
袁晨辰 中国科学技术大学中国科学院能量转换材料重点实验室合肥 230026  
罗派峰* 合肥工业大学材料科学与工程学院合肥230009 lpfeng@hfut.edu.cn 
摘要:
采用溶剂热法制备出铜铟铝硒Cu(In,Al)Se2 (CIASe)粉末,然后滴涂铜铟铝硒CIASe浆料获得前驱体薄膜,最后通过硒化/硫化过程制备出铜铟铝硒CIASe和铜铟铝硒硫CIASeS薄膜.通过XRD、SEM、XRF及光吸收等表征,发现所制备的薄膜为单相的黄铜矿结构,具有(112)择优取向.同时,在使用硫元素替代硒之后,薄膜的XRD主峰向高的2θ角度漂移,多孔薄膜也变得更加致密.薄膜带隙值也增加到更为合适的范围,从1.21 eV增加到1.33 eV,这也说明了硫化过程有利于提高CIASeS薄膜的质量.
关键词:  溶剂热法,非真空,硫化
DOI:10.1088/1674-0068/28/cjcp1502013
分类号:
基金项目:
Preparation of Cu(In,Al)(Se,S)2 Thin Films by Low-Cost Non-vacuum Hybrid Process
Zhao-fan Liu,Wei Xia,Chen-chen Yuan,Pai-feng Luo*
Abstract:
Cu(In,Al)(Se,S)2 thin films were successfully obtained through a simple low-cost non-vacuum process. The Cu(In,Al)Se2 raw material powder was firstly synthesized by a tra-ditional solvothermal route. Then, the precursor coatings were prepared by drop-coating Cu(In, Al)Se2 slurry. Finally, the Cu(In,Al)Se2 and Cu(In,Al)(Se,S)2 films were achieved by the selenization and/or sulfuration process. Through X-ray diffraction (XRD), scanning electron microscope, X-ray fluorescence, and absorption spectroscopy measurement, it was found that all the films show the single chalcopyrite phase structure and have the preferred(112) orientation. Meanwhile, after substituting selenium by sulfur, the main XRD peaks shift to higher 2θ degrees and the porous films become more compact. The energy band gap also increases to a suitable range for light absorption from 1.21 eV to 1.33 eV, which indicates that the additional sulfuration process is much more favorable for improving the quality of Cu(In,Al)(Se,S)2 films.
Key words:  Non-vacuum, Solvothermal, X-ray diffraction, Sulfuration