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基于氧化锌纳米薄片的高性能增强型场效应管和紫外光传感器
高志伟,吴昱昆,李俊文,王晓平*
作者单位E-mail
高志伟 中国科学技术大学物理系合肥 230026  
吴昱昆 中国科学技术大学物理系合肥 230026  
李俊文 中国科学技术大学物理系合肥 230026  
王晓平* 中国科学技术大学物理系合肥 230026 xpwang@ustc.edu.cn 
摘要:
借助气相输运凝结法成功制备出数纳米厚的氧化锌纳米薄片并充分研究其结构与光学性质. 利用此薄片构建出场效应管和紫外光传感器. 由于其独特的结构,此场效应管被证实为n沟道增强型并具有好的电学特性,其场效应迁移率可达到256 cm2/(V·s),开关比约为108. 而且其紫外光传感器的光响应也可显著提高到3×108.
关键词:  氧化锌,纳米薄片,场效应管,紫外传感器
DOI:10.1063/1674-0068/28/cjcp1410177
分类号:
基金项目:
High Performance of Enhanced Mode Field Effect Transistor and Ultraviolet Sensor Based on ZnO Nanosheet
Zhi-wei Gao,Yu-kun Wu,Jun-wen Li,Xiao-ping Wang*
Abstract:
ZnO nanosheets with thickness of a few nanometers are prepared by vapor transport and condensation method, and their structure and optical properties are well characterized. Field effect transistor (FET) and ultraviolet (UV) sensors are fabricated based on the ZnO nanosheets. Due to the peculiar structure of nanosheet, the FET shows n-type enhanced mode behavior and high electrical performance, and its field-effect mobility and on/off cur-rent ratio can reach 256 cm2/(V·s) and ~108, respectively. Moreover, the response of UV sensors can also be remarkably improved to ~3×108. The results make the ZnO nanosheets be a good material for the applications in nanoelectronic and optoelectronic devices.
Key words:  ZnO, Nanosheets, Field effect transistor, UV sensor