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溶胶-凝胶法制备氧化锌薄膜的压电行为
张克明,赵亚溥*,何发泉,刘冬青
作者单位E-mail
张克明 中国科学院力学研究所非线性国家重点实验室北京100080北京科技大学应用科学学院固体力学北京100083  
赵亚溥* 中国科学院力学研究所非线性国家重点实验室北京100080 yzhao@imech.ac.cn 
何发泉 中国科学院力学研究所非线性国家重点实验室北京100080  
刘冬青 北京科技大学应用科学学院固体力学北京100083  
摘要:
"采用溶胶-凝胶技术在单晶硅Si(111)上制备了ZnO压电薄膜,并以扫描电镜、X射线衍射仪(XRD)和原子力显微镜(AFM)进行了表征.XRD衍射实验表明ZnO薄膜随着膜厚的增大,其(002)取向逐渐增强;AFM研究了薄膜的表面形貌、粗糙度与晶粒大小的结果表明,ZnO压电薄膜的粗糙度与晶粒寸随着薄膜厚度的增大而减小.粗糙度为2.188~0.914 nm.利用PFM研究压电系数,发现随着薄膜厚度的增加,(002)生长方向增强,压电系数逐渐增大;当力参数小于薄膜的表面粗糙度时,压电系数测量不准确且在较大幅度
关键词:  氧化锌薄膜,压电系数,压电力显微镜,溶胶-凝胶,表面粗糙度
DOI:10.1088/1674-0068/20/06/721-726
分类号:
基金项目:
Piezoelectricity of ZnO Films Prepared by Sol-Gel Method
Ke-ming Zhang, Ya-pu Zhao*, Fa-quan He, Dong-qing Liu
Abstract:
"ZnO piezoelectric thin films were prepared on crystal substrate Si(111) by sol-gel technology, then characterized by scanning electron microscopy, X-ray diffraction and atomic force microscopy (AFM). The ZnO films characterized by X-ray diffraction are highly oriented in (002) direction with the growing of the film thickness. The morphologies, roughness and grain size of ZnO film investigated by AFM show that roughness and grain size of ZnO piezoelectric films decrease with the increase of the film thickness. The roughness dimension is 2.188-0.914 nm. The piezoelectric coeocient d33 was investigated with a piezo-response force microscope (PFM). The results show that the piezoelectric coeocient increases with the increase of thickness and (002) orientation. When the force reference is close to surface roughness of the films, the piezoelectric coefficient measured is inaccurate and fluctuates in a large range, but when the force reference is big, the piezoelectric coeocient d33 changes little and ultimately keeps constant at a low frequency."
Key words:  ZnO thin films, Piezoelectric coe±cient, Piezo-response force microscope, Sol-gel, Surface roughness