Dan Li, Ling-ming Xu, Shu-wei Li, Xun Zhou. Plasma Treatment Enhanced Magnetic Properties in Manganese Doped Titanium Nitride Thin Films[J]. Chinese Journal of Chemical Physics , 2017, 30(4): 457-460. doi: 10.1063/1674-0068/30/cjcp1703045
Citation: Dan Li, Ling-ming Xu, Shu-wei Li, Xun Zhou. Plasma Treatment Enhanced Magnetic Properties in Manganese Doped Titanium Nitride Thin Films[J]. Chinese Journal of Chemical Physics , 2017, 30(4): 457-460. doi: 10.1063/1674-0068/30/cjcp1703045

Plasma Treatment Enhanced Magnetic Properties in Manganese Doped Titanium Nitride Thin Films

doi: 10.1063/1674-0068/30/cjcp1703045
  • Received Date: 2017-03-20
  • Rev Recd Date: 2017-06-26
  • The ferromagnetic manganese doped TiN films were grown by plasma assisted molecular beam epitaxy on MgO(001) substrates. The nitrogen concentration and the ratio of manganese at Ti lattice sites increase after the plasma annealing post treatment. TiN(002) peak shifts toward low angle direction and TiN(111) peak disappears after the post treatment. The lattice expansion and peak shift are mainly ascribed to the reduction of nitrogen vacancies in films. The magnetism was suppressed in as-prepared sample due to the pinning effect of the nitrogen vacancies at defect sites or interface. The magnetism can be activated by the plasma implantation along with nitrogen vacancies reduce. The decrease of nitrogen vacancies leads to the enhancement of ferromagnetism.
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  • [1] M. Wittmerand H. Melchior, Thin Solid Films 93, 397(1982).
    [2] H. O. Pierson, Handbook of Refractory Carbides and Nitrides, William Andrew: Elsevierence, (1996).
    [3] M. Wittmer, J. Vac. Sci. Technol. A 3, 1797(1985).
    [4] H. D. Wu, W. Huang, W. F. Lu, R. F. Tang, C. Li, H. K. Lai, S. Y. Chen, and C. L. Xue, Appl. Surf. Sci. 284, 877(2013).
    [5] N. Ramanuja, R. A. Levy, S. N. Dharmadhikari, E. Ramos, C. W. Pearce, S. C. Menasian, P. C. Schamberger, and C. C. Collins, Mater. Lett. 57, 261(2002).
    [6] C. Ren, C. M. Yang, C. Lyu, C. Y. Hsu, T. C. Chen, H. C. Wang, H. Yang, W. T. Lin, P. C. Juan, C. H. Huang, D. G. Pijanowska, J. C. Wang, and J. R. Tsai, Vacuum 118, 113(2015).
    [7] A. Sugihara, S. Osaki, and R. Nakatani, J. Jpn. Inst. Met. Mater. 77, 398(2013).
    [8] Y. Nishio, T. Yamaguchi, K. Nishio, and S. Hayase, J. Appl. Electrochem. 46, 551(2016).
    [9] G. Q. Wang and S. M. Liu, Mater. Lett. 161, 294(2015).
    [10] J. Xing, H. Y. Hao, and Z. Y. Zheng, Opt. Adv. Mat. 5, 1174(2011).
    [11] V. V. Osipov and A. M. Bratkovski, Spin Injection Devices 7164181(2005).
    [12] P. Borisov, A. Hochstrat, V. V. Shvartsman, W. Kleemann, and P. M. Hauck, Integr. Ferroelectr. 99, 69(2008).
    [13] S. A. Wolf, D. D. Awschalom, R. A. Buhrman, J. M. Daughton, S. von Molnár, M. L. Roukes, A. Y. Chtchelkanova, and D. M. Treger, Science 294, 1488(2001).
    [14] S. X. Wu, Y. Q. Xia, X. L. Yu, Y. J. Liu, and S. W. Li, J. Appl. Phys. 102, 063911(2007).
    [15] K. R. Kittilstved, W. K. Liu, and D. R. Gamelin, Nat. Mater. 5, 291(2006).
    [16] S. Q. Ren, H. W. Qin, J. P. Bu, G. C. Zhu, J. H. Xie, and J. F. Hu, Appl. Phys. Lett. 107, 062404(2015).
    [17] J. M. Baik, Y. Shon, T. W. Kang, and J. L. Lee, Appl. Phys. Lett. 89, 152113(2006).
    [18] J. M. Baik, Y. Shon, T. W. Kang, and J. L. Lee, Appl. Phys. Lett. 84, 1120(2004).
    [19] L. Miao, S. Tanemura, H. Watanabe, Y. Mori, K. Kaneko, and S. Toh, J. Cryst. Growth 260, 118(2004).
    [20] L. A. Zhang, S. Tong, H. N. Liu, Y. L. Li, and Z. Wang, Mater. Lett. 171, 304(2016).
    [21] I. V. Blinkov, A. O. Volkhonskii, and Y. V. Konyukhov, Russ. Metall. 2012, 599(2012).
    [22] S. Tanemura, L. Miao, Y. Kajino, M. Tanemura, S. Toh, K. Kaneko, and Y. Mori, Jpn. J. Appl. Phys. 46, 356(2007).
    [23] N. Jiang, H. J. Zhang, S. N. Bao, Y. G. Shen, and Z. F. Zhou, Phys. B 352, 118(2004).
    [24] A. Herwadkar and W. R. L. Lambrecht, Phys. Rev. B 72, 235207(2005).
    [25] X. K. Ning, Z. J. Wang, and Z. D. Zhang, Sci. Rep. 5, 8460(2015).
    [26] K. Yamane, K. Hamaya, Y. Ando, Y. Enomoto, K. Yamamoto, T. Sadoh, and M. Miyao, Appl. Phys. Lett. 96, 162104(2010).
    [27] T. Priem, B. Beuneu, C. H. de Novion, R. Caudron, F. Solal, and A. N. Christensen, Solid State Commun. 63, 929(1987).
    [28] V. V. Bannikov, I. R. Shein, N. I. Medvedeva, and A. L. Ivanovskii, J. Magn. Magn. Mater. 321, 3624(2009).
    [29] M. B. Haider, C. Constantin, H. Al-Brithen, H. Q. Yang, E. Trifan, D. Ingram, A. R. Smith, C. V. Kelly, and Y. Ijiri, J. Appl. Phys. 93, 5274(2003).
    [30] J. M. Baik, Y. Shon, T. W. Kang, and J. L. Lee, Appl. Phys. Lett. 87, 042105(2005).
    [31] S. G. Jeong, H. Y. Park, M. H. Lim, W. S. Jung, H. Y. Yu, Y. Roh, and J. H. Park, Org. Electron. 13, 1511(2012).
    [32] S. X. Wu, Y. Q. Xia, X. L. Yu, Y. J. Liu, and S. W. Li, J. Appl. Phys. 102, 063911(2007).
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Plasma Treatment Enhanced Magnetic Properties in Manganese Doped Titanium Nitride Thin Films

doi: 10.1063/1674-0068/30/cjcp1703045

Abstract: The ferromagnetic manganese doped TiN films were grown by plasma assisted molecular beam epitaxy on MgO(001) substrates. The nitrogen concentration and the ratio of manganese at Ti lattice sites increase after the plasma annealing post treatment. TiN(002) peak shifts toward low angle direction and TiN(111) peak disappears after the post treatment. The lattice expansion and peak shift are mainly ascribed to the reduction of nitrogen vacancies in films. The magnetism was suppressed in as-prepared sample due to the pinning effect of the nitrogen vacancies at defect sites or interface. The magnetism can be activated by the plasma implantation along with nitrogen vacancies reduce. The decrease of nitrogen vacancies leads to the enhancement of ferromagnetism.

Dan Li, Ling-ming Xu, Shu-wei Li, Xun Zhou. Plasma Treatment Enhanced Magnetic Properties in Manganese Doped Titanium Nitride Thin Films[J]. Chinese Journal of Chemical Physics , 2017, 30(4): 457-460. doi: 10.1063/1674-0068/30/cjcp1703045
Citation: Dan Li, Ling-ming Xu, Shu-wei Li, Xun Zhou. Plasma Treatment Enhanced Magnetic Properties in Manganese Doped Titanium Nitride Thin Films[J]. Chinese Journal of Chemical Physics , 2017, 30(4): 457-460. doi: 10.1063/1674-0068/30/cjcp1703045
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