Bin Wen, Chao-qian Liu, Nan Wang, Hua-lin Wang, Shi-min Liu, Wei-wei Jiang, Wan-yu Ding, Wei-dong Fei, Wei-ping Chai. Crystallization Behavior and Properties of B-Doped ZnO Thin Films Prepared by Sol-Gel Method with Di erent Pyrolysis Temperatures[J]. Chinese Journal of Chemical Physics , 2016, 29(2): 229-233. doi: 10.1063/1674-0068/29/cjcp1506116
Citation: Bin Wen, Chao-qian Liu, Nan Wang, Hua-lin Wang, Shi-min Liu, Wei-wei Jiang, Wan-yu Ding, Wei-dong Fei, Wei-ping Chai. Crystallization Behavior and Properties of B-Doped ZnO Thin Films Prepared by Sol-Gel Method with Di erent Pyrolysis Temperatures[J]. Chinese Journal of Chemical Physics , 2016, 29(2): 229-233. doi: 10.1063/1674-0068/29/cjcp1506116

Crystallization Behavior and Properties of B-Doped ZnO Thin Films Prepared by Sol-Gel Method with Di erent Pyrolysis Temperatures

doi: 10.1063/1674-0068/29/cjcp1506116
  • Received Date: 2015-06-11
  • Rev Recd Date: 2015-08-14
  • Boron-doped zinc oxide transparent (BZO) films were prepared by sol-gel method. The effect of pyrolysis temperature on the crystallization behavior and properties was systematically investigated. XRD patterns revealed that the BZO films had wurtzite structure with a preferential growth orientation along the c-axis. With the increase of pyrolysis temperature, the particle size and surface roughness of the BZO films increased, suggesting that pyrolysis temperature is the critical factor for determining the crystallization behavior of the BZO films. Moreover, the carrier concentration and the carrier mobility increased with increasing the pyrolysis temperature, and the mean transmittance for every film is over 90% in the visible range.
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Crystallization Behavior and Properties of B-Doped ZnO Thin Films Prepared by Sol-Gel Method with Di erent Pyrolysis Temperatures

doi: 10.1063/1674-0068/29/cjcp1506116

Abstract: Boron-doped zinc oxide transparent (BZO) films were prepared by sol-gel method. The effect of pyrolysis temperature on the crystallization behavior and properties was systematically investigated. XRD patterns revealed that the BZO films had wurtzite structure with a preferential growth orientation along the c-axis. With the increase of pyrolysis temperature, the particle size and surface roughness of the BZO films increased, suggesting that pyrolysis temperature is the critical factor for determining the crystallization behavior of the BZO films. Moreover, the carrier concentration and the carrier mobility increased with increasing the pyrolysis temperature, and the mean transmittance for every film is over 90% in the visible range.

Bin Wen, Chao-qian Liu, Nan Wang, Hua-lin Wang, Shi-min Liu, Wei-wei Jiang, Wan-yu Ding, Wei-dong Fei, Wei-ping Chai. Crystallization Behavior and Properties of B-Doped ZnO Thin Films Prepared by Sol-Gel Method with Di erent Pyrolysis Temperatures[J]. Chinese Journal of Chemical Physics , 2016, 29(2): 229-233. doi: 10.1063/1674-0068/29/cjcp1506116
Citation: Bin Wen, Chao-qian Liu, Nan Wang, Hua-lin Wang, Shi-min Liu, Wei-wei Jiang, Wan-yu Ding, Wei-dong Fei, Wei-ping Chai. Crystallization Behavior and Properties of B-Doped ZnO Thin Films Prepared by Sol-Gel Method with Di erent Pyrolysis Temperatures[J]. Chinese Journal of Chemical Physics , 2016, 29(2): 229-233. doi: 10.1063/1674-0068/29/cjcp1506116
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