Hai-wu Zheng, Zhu-xi Fu, Bi-xia Lin, Xiao-guang Li. Growth of 3C-SiC Films on On-axis 6H-SiC Substrates by LPCVD[J]. Chinese Journal of Chemical Physics , 2007, 20(3): 305-307. doi: 10.1088/1674-0068/20/03/305-307
Citation: Hai-wu Zheng, Zhu-xi Fu, Bi-xia Lin, Xiao-guang Li. Growth of 3C-SiC Films on On-axis 6H-SiC Substrates by LPCVD[J]. Chinese Journal of Chemical Physics , 2007, 20(3): 305-307. doi: 10.1088/1674-0068/20/03/305-307

Growth of 3C-SiC Films on On-axis 6H-SiC Substrates by LPCVD

doi: 10.1088/1674-0068/20/03/305-307
Funds:  This work was supported by the National Natural Science Foundation of China (No.50132040, No.50472009).
  • Received Date: 2005-10-25
  • Cubic SiC (3C-SiC) films were deposited on on-axis 6H-SiC (0001) substrates by low-pressure chemical vapor deposition (LPCVD). The result of X-ray diffraction patterns shows that the 3C-SiC films were of good crystalline quality. The influence of the growth parameters (flow rates of the gas sources and growth temperature) on the growth rate of the SiC films is discussed. The results show that the transport of silane or its reaction products is the limiting factor for the growth. The surface morphology of the SiC films was observed by atomic force microscope imaging. From these results it can be concluded that the growth of the films is in agreement with a Stranski-Krastanov growth mode.
  • 加载中
  • 加载中
通讯作者: 陈斌, bchen63@163.com
  • 1. 

    沈阳化工大学材料科学与工程学院 沈阳 110142

  1. 本站搜索
  2. 百度学术搜索
  3. 万方数据库搜索
  4. CNKI搜索

Article Metrics

Article views(1612) PDF downloads(968) Cited by()

Proportional views
Related

Growth of 3C-SiC Films on On-axis 6H-SiC Substrates by LPCVD

doi: 10.1088/1674-0068/20/03/305-307
Funds:  This work was supported by the National Natural Science Foundation of China (No.50132040, No.50472009).

Abstract: Cubic SiC (3C-SiC) films were deposited on on-axis 6H-SiC (0001) substrates by low-pressure chemical vapor deposition (LPCVD). The result of X-ray diffraction patterns shows that the 3C-SiC films were of good crystalline quality. The influence of the growth parameters (flow rates of the gas sources and growth temperature) on the growth rate of the SiC films is discussed. The results show that the transport of silane or its reaction products is the limiting factor for the growth. The surface morphology of the SiC films was observed by atomic force microscope imaging. From these results it can be concluded that the growth of the films is in agreement with a Stranski-Krastanov growth mode.

Hai-wu Zheng, Zhu-xi Fu, Bi-xia Lin, Xiao-guang Li. Growth of 3C-SiC Films on On-axis 6H-SiC Substrates by LPCVD[J]. Chinese Journal of Chemical Physics , 2007, 20(3): 305-307. doi: 10.1088/1674-0068/20/03/305-307
Citation: Hai-wu Zheng, Zhu-xi Fu, Bi-xia Lin, Xiao-guang Li. Growth of 3C-SiC Films on On-axis 6H-SiC Substrates by LPCVD[J]. Chinese Journal of Chemical Physics , 2007, 20(3): 305-307. doi: 10.1088/1674-0068/20/03/305-307

Catalog

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return