Bao-zeng Li, Xue-sheng Chen, Hua Jiang, Zhi-qiang Zheng, An-ting Wang, Hai Ming. Radiative Properties of Tm3+ Doped in Transparent PLZT for Active Electro-optical Applications[J]. Chinese Journal of Chemical Physics , 2007, 20(2): 145-149. doi: 10.1360/cjcp2007.20(2).145.4
Citation: Bao-zeng Li, Xue-sheng Chen, Hua Jiang, Zhi-qiang Zheng, An-ting Wang, Hai Ming. Radiative Properties of Tm3+ Doped in Transparent PLZT for Active Electro-optical Applications[J]. Chinese Journal of Chemical Physics , 2007, 20(2): 145-149. doi: 10.1360/cjcp2007.20(2).145.4

Radiative Properties of Tm3+ Doped in Transparent PLZT for Active Electro-optical Applications

doi: 10.1360/cjcp2007.20(2).145.4
Funds:  This work was supported by the National Natural Science Foundation of China (No.90201013) and China Postdoctoral Science Foundation (No.2004036465).
  • Received Date: 2006-05-13
  • The optical transition probability of Tm3+ (7.0 mol%) doped PLZT was investigated because of its great interest in many fields such as optical communications in the mid-infrared waveband and medical instrumentation. The absolute intensities of its forced electric dipole transitions between 420 and 2000 nm were measured. According to Judd-Ofelt (J-O) theory, three phenomenological parameters, ?2=9.133£10-21 cm2, ?4=1.529£10-21 cm2 and ?6=1.712£10-21 cm2, were obtained. The J-O intensity parameters were used to calculate the radiative lifetime (7.493 ms) of the excited 3F4 level. The stimulated emission cross-section for the 3F4!3H6 transition was also evaluated. Analysis reveals that Tm3+-doped PLZT is promising for use as e±cient optical amplification devices or zero-loss electro-optical devices.
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    沈阳化工大学材料科学与工程学院 沈阳 110142

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Radiative Properties of Tm3+ Doped in Transparent PLZT for Active Electro-optical Applications

doi: 10.1360/cjcp2007.20(2).145.4
Funds:  This work was supported by the National Natural Science Foundation of China (No.90201013) and China Postdoctoral Science Foundation (No.2004036465).

Abstract: The optical transition probability of Tm3+ (7.0 mol%) doped PLZT was investigated because of its great interest in many fields such as optical communications in the mid-infrared waveband and medical instrumentation. The absolute intensities of its forced electric dipole transitions between 420 and 2000 nm were measured. According to Judd-Ofelt (J-O) theory, three phenomenological parameters, ?2=9.133£10-21 cm2, ?4=1.529£10-21 cm2 and ?6=1.712£10-21 cm2, were obtained. The J-O intensity parameters were used to calculate the radiative lifetime (7.493 ms) of the excited 3F4 level. The stimulated emission cross-section for the 3F4!3H6 transition was also evaluated. Analysis reveals that Tm3+-doped PLZT is promising for use as e±cient optical amplification devices or zero-loss electro-optical devices.

Bao-zeng Li, Xue-sheng Chen, Hua Jiang, Zhi-qiang Zheng, An-ting Wang, Hai Ming. Radiative Properties of Tm3+ Doped in Transparent PLZT for Active Electro-optical Applications[J]. Chinese Journal of Chemical Physics , 2007, 20(2): 145-149. doi: 10.1360/cjcp2007.20(2).145.4
Citation: Bao-zeng Li, Xue-sheng Chen, Hua Jiang, Zhi-qiang Zheng, An-ting Wang, Hai Ming. Radiative Properties of Tm3+ Doped in Transparent PLZT for Active Electro-optical Applications[J]. Chinese Journal of Chemical Physics , 2007, 20(2): 145-149. doi: 10.1360/cjcp2007.20(2).145.4

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