Influence of Thickness of the Carriers Transport Layer On the EL Properties in Organic Thin Film Electroluminescence
- Received Date: 2001-02-21
Abstract: Three organic thin film electroluminescence devices (OELD) with different thickness of carriers transport layer: 30nm, 60nm, 120nm and the same thickness of luminescent layer: 300nm, were prepared. The OELDs were the double layer structure of ITO/PVK/Alq/Al. On the basis of a model for generation transport and recombination of carriers and for carrier arbitrary hopping model in organic light emitting devices, a complete analytic function for exciton fission and recombination and for densities distribution of electron and hole are proposed, comparing and analyzing their EL spectra andJ-Vproperties, it is found that the thickness of carrier transport layer influences the brightness, current density and onset volt of EL devices. The theoretical results are in agreement with the experimental values satisfactorily.
|Citation:||Li Hongjian, Qu Shu, Xu Xiemei, Xia Hui, Peng Jingcui. Influence of Thickness of the Carriers Transport Layer On the EL Properties in Organic Thin Film Electroluminescence[J]. Chinese Journal of Chemical Physics , 2001, 14(6).|