Photoluminescence of Ga2O3 Thin Film and Characterization of Laser Ablated Species
- Received Date: 1999-02-28
- Photoluminescence,Pulsed laser deposition,Thin film,Ga2O3 /
Abstract: Ga2O3 thin films have been fabricated using 355nm pulsed laser deposition.XRD and AFM measurements showed that the films mainly consist of nanosized polycrystalline β-monoclinic Ga2O3.Photoluminescence(PL)spectra of the thin films deposited at various oxygen pressure were measured.With the increase of oxygen pressure,the PL intensity increased along with the wavelength red-shifts of the emission band,which may be due to the increase of the grain size.CeO2 dopant can enhance the PL intensity and influence the PL spectrum obviously.Additionally,the time-resolved emission spectrometry was used to characterize the ablated species generated from the laser ablation of Ga2O3.Gallium oxide species in the plume increased with increasing the oxygen pressure and the laser fluence.
|Citation:||Tang Yongxin, Yang Xinju, Qin Qizong. Photoluminescence of Ga2O3 Thin Film and Characterization of Laser Ablated Species[J]. Chinese Journal of Chemical Physics , 2000, 13(1): 25-30. doi: 10.1088/1674-0068/13/1/25-30|