Zhao-fan Liu, Wei Xia, Chen-chen Yuan, Pai-feng Luo. Preparation of Cu(In,Al)(Se,S)2 Thin Films by Low-Cost Non-vacuum Hybrid Process[J]. Chinese Journal of Chemical Physics , 2015, 28(6): 746-750. doi: 10.1088/1674-0068/28/cjcp1502013
Citation: Zhao-fan Liu, Wei Xia, Chen-chen Yuan, Pai-feng Luo. Preparation of Cu(In,Al)(Se,S)2 Thin Films by Low-Cost Non-vacuum Hybrid Process[J]. Chinese Journal of Chemical Physics , 2015, 28(6): 746-750. doi: 10.1088/1674-0068/28/cjcp1502013

Preparation of Cu(In,Al)(Se,S)2 Thin Films by Low-Cost Non-vacuum Hybrid Process

doi: 10.1088/1674-0068/28/cjcp1502013
Funds:  This work was financially supported by the National Natural Science Foundation of China (No.51302058 and No.U1532140), the Natural Science Foundation of An-hui Province (No.JZ2015AKZR0031), and the Opening Project of CAS Key Laboratory of Materials for Energy Conversion at University of Science and Technology of China.
  • Received Date: 2015-02-03
  • Cu(In,Al)(Se,S)2 thin films were successfully obtained through a simple low-cost non-vacuum process. The Cu(In,Al)Se2 raw material powder was firstly synthesized by a tra-ditional solvothermal route. Then, the precursor coatings were prepared by drop-coating Cu(In, Al)Se2 slurry. Finally, the Cu(In,Al)Se2 and Cu(In,Al)(Se,S)2 films were achieved by the selenization and/or sulfuration process. Through X-ray diffraction (XRD), scanning electron microscope, X-ray fluorescence, and absorption spectroscopy measurement, it was found that all the films show the single chalcopyrite phase structure and have the preferred(112) orientation. Meanwhile, after substituting selenium by sulfur, the main XRD peaks shift to higher 2θ degrees and the porous films become more compact. The energy band gap also increases to a suitable range for light absorption from 1.21 eV to 1.33 eV, which indicates that the additional sulfuration process is much more favorable for improving the quality of Cu(In,Al)(Se,S)2 films.
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Preparation of Cu(In,Al)(Se,S)2 Thin Films by Low-Cost Non-vacuum Hybrid Process

doi: 10.1088/1674-0068/28/cjcp1502013
Funds:  This work was financially supported by the National Natural Science Foundation of China (No.51302058 and No.U1532140), the Natural Science Foundation of An-hui Province (No.JZ2015AKZR0031), and the Opening Project of CAS Key Laboratory of Materials for Energy Conversion at University of Science and Technology of China.

Abstract: Cu(In,Al)(Se,S)2 thin films were successfully obtained through a simple low-cost non-vacuum process. The Cu(In,Al)Se2 raw material powder was firstly synthesized by a tra-ditional solvothermal route. Then, the precursor coatings were prepared by drop-coating Cu(In, Al)Se2 slurry. Finally, the Cu(In,Al)Se2 and Cu(In,Al)(Se,S)2 films were achieved by the selenization and/or sulfuration process. Through X-ray diffraction (XRD), scanning electron microscope, X-ray fluorescence, and absorption spectroscopy measurement, it was found that all the films show the single chalcopyrite phase structure and have the preferred(112) orientation. Meanwhile, after substituting selenium by sulfur, the main XRD peaks shift to higher 2θ degrees and the porous films become more compact. The energy band gap also increases to a suitable range for light absorption from 1.21 eV to 1.33 eV, which indicates that the additional sulfuration process is much more favorable for improving the quality of Cu(In,Al)(Se,S)2 films.

Zhao-fan Liu, Wei Xia, Chen-chen Yuan, Pai-feng Luo. Preparation of Cu(In,Al)(Se,S)2 Thin Films by Low-Cost Non-vacuum Hybrid Process[J]. Chinese Journal of Chemical Physics , 2015, 28(6): 746-750. doi: 10.1088/1674-0068/28/cjcp1502013
Citation: Zhao-fan Liu, Wei Xia, Chen-chen Yuan, Pai-feng Luo. Preparation of Cu(In,Al)(Se,S)2 Thin Films by Low-Cost Non-vacuum Hybrid Process[J]. Chinese Journal of Chemical Physics , 2015, 28(6): 746-750. doi: 10.1088/1674-0068/28/cjcp1502013

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