Ting Xu, Jing Huang, Qun-xiang Li. Negative Differential Resistance and Spin-Filtering Effects in Zigzag Graphene Nanoribbons with Nitrogen-Vacancy Defects[J]. Chinese Journal of Chemical Physics , 2014, 27(6): 653-658. doi: 10.1063/1674-0068/27/06/653-658
Citation: Ting Xu, Jing Huang, Qun-xiang Li. Negative Differential Resistance and Spin-Filtering Effects in Zigzag Graphene Nanoribbons with Nitrogen-Vacancy Defects[J]. Chinese Journal of Chemical Physics , 2014, 27(6): 653-658. doi: 10.1063/1674-0068/27/06/653-658

Negative Differential Resistance and Spin-Filtering Effects in Zigzag Graphene Nanoribbons with Nitrogen-Vacancy Defects

doi: 10.1063/1674-0068/27/06/653-658
  • Received Date: 2014-06-01
  • We explore the electronic and transport properties of zigzag graphene nanoribbons (GNRs) with nitrogen-vacancy defects by performing fully self-consistent spin-polarized density functional theory calculations combined with non-equilibrium Green's function technique. We observe robust negative di erential resistance (NDR) effect in all examined molecular junctions. Through analyzing the calculated electronic structures and the bias-dependent transmission coefficients, we find that the narrow density of states of electrodes and the bias-dependent effective coupling between the central molecular orbitals and the electrode subbands areresponsible for the observed NDR phenomenon. In addition, the obvious di erence of the transmission spectra of two spin channels is observed in some bias ranges, which leads to the near perfect spin-filtering effect. These theoretical findings imply that GNRs with nitrogenvacancy defects hold great potential for building molecular devices.
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    沈阳化工大学材料科学与工程学院 沈阳 110142

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Negative Differential Resistance and Spin-Filtering Effects in Zigzag Graphene Nanoribbons with Nitrogen-Vacancy Defects

doi: 10.1063/1674-0068/27/06/653-658

Abstract: We explore the electronic and transport properties of zigzag graphene nanoribbons (GNRs) with nitrogen-vacancy defects by performing fully self-consistent spin-polarized density functional theory calculations combined with non-equilibrium Green's function technique. We observe robust negative di erential resistance (NDR) effect in all examined molecular junctions. Through analyzing the calculated electronic structures and the bias-dependent transmission coefficients, we find that the narrow density of states of electrodes and the bias-dependent effective coupling between the central molecular orbitals and the electrode subbands areresponsible for the observed NDR phenomenon. In addition, the obvious di erence of the transmission spectra of two spin channels is observed in some bias ranges, which leads to the near perfect spin-filtering effect. These theoretical findings imply that GNRs with nitrogenvacancy defects hold great potential for building molecular devices.

Ting Xu, Jing Huang, Qun-xiang Li. Negative Differential Resistance and Spin-Filtering Effects in Zigzag Graphene Nanoribbons with Nitrogen-Vacancy Defects[J]. Chinese Journal of Chemical Physics , 2014, 27(6): 653-658. doi: 10.1063/1674-0068/27/06/653-658
Citation: Ting Xu, Jing Huang, Qun-xiang Li. Negative Differential Resistance and Spin-Filtering Effects in Zigzag Graphene Nanoribbons with Nitrogen-Vacancy Defects[J]. Chinese Journal of Chemical Physics , 2014, 27(6): 653-658. doi: 10.1063/1674-0068/27/06/653-658

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