Zong-liang Li, Xiao-xiao Fu, Guang-ping Zhang, Chuan-kui Wang. Effect of Gate Electric Field on Single Organic Molecular Devices (cited: 3)[J]. Chinese Journal of Chemical Physics , 2013, 26(2): 185-190. doi: 10.1063/1674-0068/26/02/185-190
Citation: Zong-liang Li, Xiao-xiao Fu, Guang-ping Zhang, Chuan-kui Wang. Effect of Gate Electric Field on Single Organic Molecular Devices (cited: 3)[J]. Chinese Journal of Chemical Physics , 2013, 26(2): 185-190. doi: 10.1063/1674-0068/26/02/185-190

Effect of Gate Electric Field on Single Organic Molecular Devices (cited: 3)

doi: 10.1063/1674-0068/26/02/185-190
  • Received Date: 2012-02-02
  • Based on the first-principles computational method and elastic scattering Green's function theory, we have investigated the effect of gate electric field on electronic transport properties of a series of single organic molecular junctions theoretically. The numerical results show that the molecular junctions that have redox centers and relatively large dipole moments parallel gate direction can respond to the gate electric field remarkably. The current-voltage properties of 2,5-dimethyl-thiophene-dithiol present N-channel-metal-oxide-semiconductor-like characteristics. Its distinct current-voltage properties can be understood from the evo-lution of eigenvalues, coupling energies, and atomic charges with gate electric field.
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    沈阳化工大学材料科学与工程学院 沈阳 110142

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Effect of Gate Electric Field on Single Organic Molecular Devices (cited: 3)

doi: 10.1063/1674-0068/26/02/185-190

Abstract: Based on the first-principles computational method and elastic scattering Green's function theory, we have investigated the effect of gate electric field on electronic transport properties of a series of single organic molecular junctions theoretically. The numerical results show that the molecular junctions that have redox centers and relatively large dipole moments parallel gate direction can respond to the gate electric field remarkably. The current-voltage properties of 2,5-dimethyl-thiophene-dithiol present N-channel-metal-oxide-semiconductor-like characteristics. Its distinct current-voltage properties can be understood from the evo-lution of eigenvalues, coupling energies, and atomic charges with gate electric field.

Zong-liang Li, Xiao-xiao Fu, Guang-ping Zhang, Chuan-kui Wang. Effect of Gate Electric Field on Single Organic Molecular Devices (cited: 3)[J]. Chinese Journal of Chemical Physics , 2013, 26(2): 185-190. doi: 10.1063/1674-0068/26/02/185-190
Citation: Zong-liang Li, Xiao-xiao Fu, Guang-ping Zhang, Chuan-kui Wang. Effect of Gate Electric Field on Single Organic Molecular Devices (cited: 3)[J]. Chinese Journal of Chemical Physics , 2013, 26(2): 185-190. doi: 10.1063/1674-0068/26/02/185-190

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