Z. Khalaj, M.Ghoranneviss, S.Nasiri laheghi, Z.Ghorannevis, R.Hatakeyama. Growth of Nano Crystalline Diamond on Silicon Substrate Using Different Etching Gases by HFCVD[J]. Chinese Journal of Chemical Physics , 2010, 23(6): 689-692. doi: 10.1088/1674-0068/23/06/689-692
Citation: Z. Khalaj, M.Ghoranneviss, S.Nasiri laheghi, Z.Ghorannevis, R.Hatakeyama. Growth of Nano Crystalline Diamond on Silicon Substrate Using Different Etching Gases by HFCVD[J]. Chinese Journal of Chemical Physics , 2010, 23(6): 689-692. doi: 10.1088/1674-0068/23/06/689-692

Growth of Nano Crystalline Diamond on Silicon Substrate Using Different Etching Gases by HFCVD

doi: 10.1088/1674-0068/23/06/689-692
  • Received Date: 2010-02-10
  • We investigate the effects of etching gases on the synthesis of nano crystalline diamonds grown on silicon substrate at the substrate temperature of 550 oC and the reaction pressure of 4 kPa by hot filament chemical vapor deposition method, in which CH4 and H2 act as a source and diluting gases, respectively. N2, H2, and NH3 were used as the etching gases, respectively. Results show that the optimum conditions can be obtained only for the case of H2 gas. The crystal morphology and crystallinity of the samples have been examined by scanning electron microscopy and X-ray diffraction, respectively.
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    沈阳化工大学材料科学与工程学院 沈阳 110142

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Growth of Nano Crystalline Diamond on Silicon Substrate Using Different Etching Gases by HFCVD

doi: 10.1088/1674-0068/23/06/689-692

Abstract: We investigate the effects of etching gases on the synthesis of nano crystalline diamonds grown on silicon substrate at the substrate temperature of 550 oC and the reaction pressure of 4 kPa by hot filament chemical vapor deposition method, in which CH4 and H2 act as a source and diluting gases, respectively. N2, H2, and NH3 were used as the etching gases, respectively. Results show that the optimum conditions can be obtained only for the case of H2 gas. The crystal morphology and crystallinity of the samples have been examined by scanning electron microscopy and X-ray diffraction, respectively.

Z. Khalaj, M.Ghoranneviss, S.Nasiri laheghi, Z.Ghorannevis, R.Hatakeyama. Growth of Nano Crystalline Diamond on Silicon Substrate Using Different Etching Gases by HFCVD[J]. Chinese Journal of Chemical Physics , 2010, 23(6): 689-692. doi: 10.1088/1674-0068/23/06/689-692
Citation: Z. Khalaj, M.Ghoranneviss, S.Nasiri laheghi, Z.Ghorannevis, R.Hatakeyama. Growth of Nano Crystalline Diamond on Silicon Substrate Using Different Etching Gases by HFCVD[J]. Chinese Journal of Chemical Physics , 2010, 23(6): 689-692. doi: 10.1088/1674-0068/23/06/689-692

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