Shuai Jiang, Guo-shun Jiang, Wei-feng Liu, Chang-fei Zhu. Synthesis of High Quality CuInSe2 Films with Oxygen Precursor by Non-vacuum Process[J]. Chinese Journal of Chemical Physics , 2010, 23(5): 587-590. doi: 10.1088/1674-0068/23/05/587-590
Citation: Shuai Jiang, Guo-shun Jiang, Wei-feng Liu, Chang-fei Zhu. Synthesis of High Quality CuInSe2 Films with Oxygen Precursor by Non-vacuum Process[J]. Chinese Journal of Chemical Physics , 2010, 23(5): 587-590. doi: 10.1088/1674-0068/23/05/587-590

Synthesis of High Quality CuInSe2 Films with Oxygen Precursor by Non-vacuum Process

doi: 10.1088/1674-0068/23/05/587-590
Funds:  This work was supported by the National Basic Re-search Program of China (No.2006CB922000) and the Knowledge Innovation Project of the Chinese Academy of Sciences (No.KJCX2-YW-M11).
  • Received Date: 2010-02-09
  • The CuInSe2 absorber was synthesized by non-vacuum process with a simple and low-cost method, which fabricated absorber layer of thin-film solar cell. The extra amount of Se was added into the ink to help reduction of the oxide and solid Se fountain was used to provide Se atmosphere during the selenization progress. The influence of same factors was investigated, such as the time of reduction in H2, the time of selenization and the Se vapor pressure. The selenizaion, processed at 550 °C for 60 min with the Se vapor pressure at 1.90 kPa, resulted in high quality CuInSe2 layer with very good chemical composition.
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Synthesis of High Quality CuInSe2 Films with Oxygen Precursor by Non-vacuum Process

doi: 10.1088/1674-0068/23/05/587-590
Funds:  This work was supported by the National Basic Re-search Program of China (No.2006CB922000) and the Knowledge Innovation Project of the Chinese Academy of Sciences (No.KJCX2-YW-M11).

Abstract: The CuInSe2 absorber was synthesized by non-vacuum process with a simple and low-cost method, which fabricated absorber layer of thin-film solar cell. The extra amount of Se was added into the ink to help reduction of the oxide and solid Se fountain was used to provide Se atmosphere during the selenization progress. The influence of same factors was investigated, such as the time of reduction in H2, the time of selenization and the Se vapor pressure. The selenizaion, processed at 550 °C for 60 min with the Se vapor pressure at 1.90 kPa, resulted in high quality CuInSe2 layer with very good chemical composition.

Shuai Jiang, Guo-shun Jiang, Wei-feng Liu, Chang-fei Zhu. Synthesis of High Quality CuInSe2 Films with Oxygen Precursor by Non-vacuum Process[J]. Chinese Journal of Chemical Physics , 2010, 23(5): 587-590. doi: 10.1088/1674-0068/23/05/587-590
Citation: Shuai Jiang, Guo-shun Jiang, Wei-feng Liu, Chang-fei Zhu. Synthesis of High Quality CuInSe2 Films with Oxygen Precursor by Non-vacuum Process[J]. Chinese Journal of Chemical Physics , 2010, 23(5): 587-590. doi: 10.1088/1674-0068/23/05/587-590

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