Qiu-xiang Liu, Xin-gui Tang, Yan-ping Jiang, H. L. W. Chan. Ferroelectric and Pyroelectric Properties of Highly (111)-oriented Nanocrystalline Pb(Zr0:95Ti0:05)O3 Thin Films[J]. Chinese Journal of Chemical Physics , 2007, 20(6): 763-767. doi: 10.1088/1674-0068/20/06/763-767
Citation: Qiu-xiang Liu, Xin-gui Tang, Yan-ping Jiang, H. L. W. Chan. Ferroelectric and Pyroelectric Properties of Highly (111)-oriented Nanocrystalline Pb(Zr0:95Ti0:05)O3 Thin Films[J]. Chinese Journal of Chemical Physics , 2007, 20(6): 763-767. doi: 10.1088/1674-0068/20/06/763-767

Ferroelectric and Pyroelectric Properties of Highly (111)-oriented Nanocrystalline Pb(Zr0:95Ti0:05)O3 Thin Films

doi: 10.1088/1674-0068/20/06/763-767
Funds:  This work was supported by the Guangdong Provincial Natural Science Foundation of China (No.05001825), the Project 1-BB95 (Smart Structures and Systems Based on Electro- and Magneto- Active Materials) of the Hong Kong Polytechnic University, and the Open Project Program of Key Laboratory of Low Dimensional Materials & Application Technology (Xiangtan University), Ministry of Education, China (No.KF0707).
  • Received Date: 2007-08-30
  • Rev Recd Date: 2007-09-07
  • "Lead zirconate titanate Pb(Zr0:95Ti0:05)O3 (PZT95/5) antiferroelectric thin films with 300 nm thickness were grown on Pt/Ti/SiO2/Si substrates by a sol-gel method with rapid thermal annealing processing. The X-ray diffraction results showed that the highly (111)-oriented pervoskite PZT95/5 thin films were grown on Pt/Ti/SiO2/Si substrates when annealed at 600-700 oC. Electrical measurements were conducted on PZT95/5 films in metal-ferroelectric-metal capacitor configuration. The PZT95/5 thin films annealed at 600-700 oC showed well-saturated hysteresis loops at an applied voltage of 20 V. At 1 kHz, the dielectric constant and dielectric loss of the films were 519 and 0.028, 677 and 0.029, 987 and 0.025, respectively for the thin films annealed at 600, 650, and 700 oC. The average remanent polarization (Pr) and the coercive electric field (Ec) obtained from the P-E hysteresis loops, were 19.1 1C/cm2 and 135.6 kV/cm, 29.31C/cm2 and 88.57 kV/cm, 45.3 1C/cm2 and 102.1 kV/cm, respectively for PZT95/5 thin films annealed at 600, 650 and 700 oC for 10 min in the oxygen atmosphere. This showed a good ferroelectricity of the prepared PZT95/5 films on Pt/Ti/SiO2/Si substrates by the simple sol-gel processing. The pyroelectric coeocient (p) of antiferroelectric PZT95/5 films was measured by a dynamic technique. At room temperature, the p values of the antiferroelectric PZT95/5 films at 1 kHz were 274, 238, and 212 1C/m2K."
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Ferroelectric and Pyroelectric Properties of Highly (111)-oriented Nanocrystalline Pb(Zr0:95Ti0:05)O3 Thin Films

doi: 10.1088/1674-0068/20/06/763-767
Funds:  This work was supported by the Guangdong Provincial Natural Science Foundation of China (No.05001825), the Project 1-BB95 (Smart Structures and Systems Based on Electro- and Magneto- Active Materials) of the Hong Kong Polytechnic University, and the Open Project Program of Key Laboratory of Low Dimensional Materials & Application Technology (Xiangtan University), Ministry of Education, China (No.KF0707).

Abstract: "Lead zirconate titanate Pb(Zr0:95Ti0:05)O3 (PZT95/5) antiferroelectric thin films with 300 nm thickness were grown on Pt/Ti/SiO2/Si substrates by a sol-gel method with rapid thermal annealing processing. The X-ray diffraction results showed that the highly (111)-oriented pervoskite PZT95/5 thin films were grown on Pt/Ti/SiO2/Si substrates when annealed at 600-700 oC. Electrical measurements were conducted on PZT95/5 films in metal-ferroelectric-metal capacitor configuration. The PZT95/5 thin films annealed at 600-700 oC showed well-saturated hysteresis loops at an applied voltage of 20 V. At 1 kHz, the dielectric constant and dielectric loss of the films were 519 and 0.028, 677 and 0.029, 987 and 0.025, respectively for the thin films annealed at 600, 650, and 700 oC. The average remanent polarization (Pr) and the coercive electric field (Ec) obtained from the P-E hysteresis loops, were 19.1 1C/cm2 and 135.6 kV/cm, 29.31C/cm2 and 88.57 kV/cm, 45.3 1C/cm2 and 102.1 kV/cm, respectively for PZT95/5 thin films annealed at 600, 650 and 700 oC for 10 min in the oxygen atmosphere. This showed a good ferroelectricity of the prepared PZT95/5 films on Pt/Ti/SiO2/Si substrates by the simple sol-gel processing. The pyroelectric coeocient (p) of antiferroelectric PZT95/5 films was measured by a dynamic technique. At room temperature, the p values of the antiferroelectric PZT95/5 films at 1 kHz were 274, 238, and 212 1C/m2K."

Qiu-xiang Liu, Xin-gui Tang, Yan-ping Jiang, H. L. W. Chan. Ferroelectric and Pyroelectric Properties of Highly (111)-oriented Nanocrystalline Pb(Zr0:95Ti0:05)O3 Thin Films[J]. Chinese Journal of Chemical Physics , 2007, 20(6): 763-767. doi: 10.1088/1674-0068/20/06/763-767
Citation: Qiu-xiang Liu, Xin-gui Tang, Yan-ping Jiang, H. L. W. Chan. Ferroelectric and Pyroelectric Properties of Highly (111)-oriented Nanocrystalline Pb(Zr0:95Ti0:05)O3 Thin Films[J]. Chinese Journal of Chemical Physics , 2007, 20(6): 763-767. doi: 10.1088/1674-0068/20/06/763-767

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