Surface Formation of Single Silicon Wafer Polished with Nano-sized Al2O3 Powders
- Received Date: 2007-07-23
- Rev Recd Date: 2007-07-23
- Single silicon wafer, Nano-sized Al2O3, Ice fixed abrasives CMP, Nanoscratch, Ductile regime machining
Abstract: "Ice polishing single silicon wafers with nano-sized Al2O3 abrasives can be known as ice fixed abrasives chemical mechanical polishing (IFA-CMP). TAn abrasive slurry was made of nano-sized Al2O3 particles dispersed in de-ionized water with a surfactant and the slurry was frozen to form an ice polishing pad. Then polishing tests of blanket silicon wafers with the above ice polishing pad were carried out. The morphologies and surface roughness of the polished silicon wafers were observed and examined on an atomic force microscope. The subsurface damage was assessed by means of cross-section transmission electron microscopy. The surface chemical constituents of the polished silicon wafers were characterized using X-ray photoelectron spectroscopy in order to gain insight into the chemical mechanisms in the process. Scratch resistance of the single silicon wafer was measured by nanoscratching using a nanoindenter to explore the mechanical removal mechanism. The results show that a super smooth surface with an average roughness of 0.367 nm is obtained within 1000 nm￡1000 nm and there is a perfect silicon diamond structure without any microcracks in the subsurface. The removal of material is dominated by the coactions of ductile regime machining and chemical corrosion. In the end, a model of material removal of IFA-CMP is built."
|Citation:||Yu-li Sun, Dun-wen Zuo, Yong-wei Zhu, Min Wang. Surface Formation of Single Silicon Wafer Polished with Nano-sized Al2O3 Powders[J]. Chinese Journal of Chemical Physics , 2007, 20(6): 643-648. doi: 10.1088/1674-0068/20/06/643-648|