Mutlu Kundak??. Characterization of CuInS2 Thin Films with Different Cu/In Ratio[J]. Chinese Journal of Chemical Physics , 2010, 23(5): 582-586. doi: 10.1088/1674-0068/23/05/582-586
Citation: Mutlu Kundak??. Characterization of CuInS2 Thin Films with Different Cu/In Ratio[J]. Chinese Journal of Chemical Physics , 2010, 23(5): 582-586. doi: 10.1088/1674-0068/23/05/582-586

Characterization of CuInS2 Thin Films with Different Cu/In Ratio

doi: 10.1088/1674-0068/23/05/582-586
  • Received Date: 2010-03-06
  • Thin films of CuInS2 were grown on glass substrate by successive ionic layer adsorption and reaction method with different [Cu]/[In] ratios and annealed at 400 °C for 30 min. The crystal structure and grain sizes of the thin films were characterized by X-ray diffraction method. Atomic force microscopy was used to determine surface morphology of the films. Optical and electrical properties of these films were investigated as a function of [Cu]/[In]ratios. The electrical resistivity of CuInS2 of thin films was determined using a direct current-two probe method in the temperature range of 300—470 K. It is observed that, the electrical resistivity values show a big decreasing with increasing [Cu]/[In] ratio. Hence, the [Cu]/[In] ratio in the solution can drastically affect the structural, electrical, and optical properties of thin films of CuInS2.

     

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