Volume 33 Issue 6
Jan.  2021
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Kamal Hosen, Md. Rasidul Islam, Kong Liu. Impact of Channel Length and Width for Charge Transportation of Graphene Field Effect Transistor[J]. Chinese Journal of Chemical Physics , 2020, 33(6): 757-763. doi: 10.1063/1674-0068/cjcp2004055
 Citation: Kamal Hosen, Md. Rasidul Islam, Kong Liu. Impact of Channel Length and Width for Charge Transportation of Graphene Field Effect Transistor[J]. Chinese Journal of Chemical Physics , 2020, 33(6): 757-763.

# Impact of Channel Length and Width for Charge Transportation of Graphene Field Effect Transistor

##### doi: 10.1063/1674-0068/cjcp2004055
• The effect of channel length and width on the large and small-signal parameters of the graphene field effect transistor have been explored using an analytical approach. In the case of faster saturation as well as extremely high transit frequency, the graphene field effect transistor shows outstanding performance. From the transfer curve, it is observed that there is a positive shift of Dirac point from the voltage of 0.15 V to 0.35 V because of reducing channel length from 440 nm to 20 nm and this curve depicts that graphene shows ambipolar behavior. Besides, it is found that because of widening channel the drain current increases and the maximum current is found approximately 2.4 mA and 6 mA for channel width 2 μm and 5 μm respectively. Furthermore, an approximate symmetrical capacitance-voltage ($C-V$) characteristic of the graphene field effect transistor is obtained and the capacitance reduces when the channel length decreases but the capacitance can be increased by raising the channel width. In addition, a high transconductance, that demands high-speed radio frequency (RF) applications, of 6.4 mS at channel length 20 nm and 4.45 mS at channel width 5 μm along with a high transit frequency of 3.95 THz have been found that demands high-speed radio frequency applications.
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###### 通讯作者: 陈斌, bchen63@163.com
• 1.

沈阳化工大学材料科学与工程学院 沈阳 110142

Figures(8)  / Tables(1)

## Impact of Channel Length and Width for Charge Transportation of Graphene Field Effect Transistor

##### doi: 10.1063/1674-0068/cjcp2004055
###### Corresponding author:Md. Rasidul Islam, E-mail:ronyrasidul@gmail.com; Kong Liu, E-mail:liukong@semi.ac.cn

Abstract: The effect of channel length and width on the large and small-signal parameters of the graphene field effect transistor have been explored using an analytical approach. In the case of faster saturation as well as extremely high transit frequency, the graphene field effect transistor shows outstanding performance. From the transfer curve, it is observed that there is a positive shift of Dirac point from the voltage of 0.15 V to 0.35 V because of reducing channel length from 440 nm to 20 nm and this curve depicts that graphene shows ambipolar behavior. Besides, it is found that because of widening channel the drain current increases and the maximum current is found approximately 2.4 mA and 6 mA for channel width 2 μm and 5 μm respectively. Furthermore, an approximate symmetrical capacitance-voltage ($C-V$) characteristic of the graphene field effect transistor is obtained and the capacitance reduces when the channel length decreases but the capacitance can be increased by raising the channel width. In addition, a high transconductance, that demands high-speed radio frequency (RF) applications, of 6.4 mS at channel length 20 nm and 4.45 mS at channel width 5 μm along with a high transit frequency of 3.95 THz have been found that demands high-speed radio frequency applications.

Kamal Hosen, Md. Rasidul Islam, Kong Liu. Impact of Channel Length and Width for Charge Transportation of Graphene Field Effect Transistor[J]. Chinese Journal of Chemical Physics , 2020, 33(6): 757-763. doi: 10.1063/1674-0068/cjcp2004055
 Citation: Kamal Hosen, Md. Rasidul Islam, Kong Liu. Impact of Channel Length and Width for Charge Transportation of Graphene Field Effect Transistor[J]. Chinese Journal of Chemical Physics , 2020, 33(6): 757-763.
Reference (24)

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