Advanced Search
    Wang Lei, Feng Xusheng, Yang Kongzhang. The Preparation and Structure of L-B Films of Mn(Ⅲ)TPP(COOH) and the Ⅰ-Ⅴ Characterization for MIM MIS Devices Fabricated from the L-B Films[J]. Chinese Journal of Chemical Physics , 1993, 6(3): 281-286.
    Citation: Wang Lei, Feng Xusheng, Yang Kongzhang. The Preparation and Structure of L-B Films of Mn(Ⅲ)TPP(COOH) and the Ⅰ-Ⅴ Characterization for MIM MIS Devices Fabricated from the L-B Films[J]. Chinese Journal of Chemical Physics , 1993, 6(3): 281-286.

    The Preparation and Structure of L-B Films of Mn(Ⅲ)TPP(COOH) and the - Characterization for MIM MIS Devices Fabricated from the L-B Films

    • This paper reported the preparation and structural characteristics of L-B films of Mn(Ⅲ)TPP(COOH) in which four long hydrocarbon chains were symmetrically attached to the phenyl rings. A fairly good deposition was taken on hydrophobic glass, quartz and solicon slids, UV-Vis absoprtion spectra of L-B films of different layers were measured. The intensity of Soret band of porphy rin molecules was linear increased with layers. This indicated that the uniformity of L-B films in vertical is good. The results of X-rays diffraction of L-B films of Mn(Ⅲ)TPP(COOH) showed that it have periodic structure and the quality of the L-B films could be improved by mixting Mn(Ⅲ)TPP (COOH) with n-cetane. A1/L-B films/A1 and A1/L-B films / Si devices (ie MIM MIS) was fabricated. The I-V characteristic curves of MIM and MIS devices were measured. The electrical resistance of L-B films was 1012-1013Ω cm normal to the substrates with the same magnitued order as stearic acid layers. This confirmed the conductivity of the L-B films in vertical was independent of the occuring of the porphyrin rings.It is still a insulating films and can offers electric fields greater than the 107V/m.
    • loading

    Catalog

      /

      DownLoad:  Full-Size Img  PowerPoint
      Return
      Return