Investigation on C-V Characterization for MIS Device of LB Film of Ferric Hydroxide Distearate and on XPS for the Film on Silicon Substrate

The LB films of ferric hydroxide distearate were prepared by means of spreading directly. Al/FeSt₂OH LB films/Si device (i. e. MIS) was made. The C-V characteristic curves of five layers film's MIS device were measured. No "lead effect" and "platform effect" usually occurred in C—V curves of MOS device appeared. When leakage current was 1μA, its tolerable voltage was 7.8V The presence of ferric ions and the interaction between ferric ions and silicon surface were verified by XPS. The escape depth of photoelectrons in the layers was estimated about 120—170Å. The results determined by angular-resolved XPS showed that the LB films deposited on silicon substrate were even and dense as a whole.