Xu Pengshou, Zhao Texiu, Ji Mingrong, Wu Jianxin, Liu Xianming. Cl Adsorbed on the surface of GaAs (110)[J]. Chinese Journal of Chemical Physics , 1989, 2(6): 457-460.
Citation:
Xu Pengshou, Zhao Texiu, Ji Mingrong, Wu Jianxin, Liu Xianming. Cl Adsorbed on the surface of GaAs (110)[J]. Chinese Journal of Chemical Physics , 1989, 2(6): 457-460.
Xu Pengshou, Zhao Texiu, Ji Mingrong, Wu Jianxin, Liu Xianming. Cl Adsorbed on the surface of GaAs (110)[J]. Chinese Journal of Chemical Physics , 1989, 2(6): 457-460.
Citation:
Xu Pengshou, Zhao Texiu, Ji Mingrong, Wu Jianxin, Liu Xianming. Cl Adsorbed on the surface of GaAs (110)[J]. Chinese Journal of Chemical Physics , 1989, 2(6): 457-460.
UPS and the changes of work function on GaAs(110) adsorbed by different amount of Cl are obtained. It is Shown that the work function increased when more Cl was adsorbed, which may be caused by the change of the ionisation energy.
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