The Investigation of the Microstructures in Grystallized a-Si:H Films

Plasma enhanced chemical vapor deposited （PECVD） a-Si:H films, undoped and phosphorus （P） doped, have been crystallized using CW Ar⁺ laser irradiation or arc lamp rapid thermal annealing （RTA）. In the case of Ar⁺ laser crystallization, the results of X-ray diffraction spactra and transmission electron microscope （TEM） photographs show that crystallized films exhibit ＜ 111 ＞ preferred orientation and have average grain size about tens micrometer order of magnitude. And in the RTA situation, the samples are also crystallized with the ＜ 111 ＞ texture orientation. But the results of XDS indicate that the grain size of P doped sample is greater than that of undoped one and have submicron order of magnitude.