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    Lin Yuan, Xiao Xurui, Zhang Zhiwei, Meng Xianjuan. Digital Simulation of Photovoltage Transient Behaviors of CdSe Thin Film Electrode[J]. Chinese Journal of Chemical Physics , 1991, 4(5): 377-382.
    Citation: Lin Yuan, Xiao Xurui, Zhang Zhiwei, Meng Xianjuan. Digital Simulation of Photovoltage Transient Behaviors of CdSe Thin Film Electrode[J]. Chinese Journal of Chemical Physics , 1991, 4(5): 377-382.

    Digital Simulation of Photovoltage Transient Behaviors of CdSe Thin Film Electrode

    • Photovoltage transient behaviors of CdSe thin films electrode have been measured by plused laser irradiation. Both fast and slow transients based on photogeneration, recombination and interfacial charge transfer were observed in polysulfide and ferro-ferricyanide solution. A digital simulation technique were applied for theoretical analysis. From the simulated parameters of interfacial redox reaction rate constant Kp and Kn , the Kinentic bahaviours of interfacial charge transfer of CdSe thin film electrode in different solution were discussed.
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