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Lin-bao Luo, Xiu-xing Zhang, Chen Li, Jia-xiang Li, Xing-yuan Zhao, Zhi-xiang Zhang, Hong-yun Chen, Di Wu, Feng-xia Liang. Fabrication of PdSe2/GaAs Heterojunction for High Iligh/Idark Ratio, Air-Stable Near-Infrared Photovoltaic detector and Image Sensor Application[J]. Chinese Journal of Chemical Physics .
Citation: Lin-bao Luo, Xiu-xing Zhang, Chen Li, Jia-xiang Li, Xing-yuan Zhao, Zhi-xiang Zhang, Hong-yun Chen, Di Wu, Feng-xia Liang. Fabrication of PdSe2/GaAs Heterojunction for High Iligh/Idark Ratio, Air-Stable Near-Infrared Photovoltaic detector and Image Sensor Application[J]. Chinese Journal of Chemical Physics .

Fabrication of PdSe2/GaAs Heterojunction for High Iligh/Idark Ratio, Air-Stable Near-Infrared Photovoltaic detector and Image Sensor Application

  • Received Date: 2020-05-09
  • Accepted Date: 2020-01-01
  • In this study, we have developed a high-sensitivity, near-infrared photodetector (NIRPD) based on PdSe2/GaAs heterojunction, which was made by transferring a multilayered PdSe2 film onto a planar GaAs. The as-fabricated PdSe2/GaAs heterojunction device exhibited obvious photovoltaic behavior to 808 nm illumination, indicating that the NIRPD can be used as a self-driven device without external power supply. Further device analysis showed that the hybrid heterojunction exhibited a high on/off ratio ratio of 1.16×105 measured at 808 nm under zero bias voltage. The responsivity and specific detectivity of photodetector were estimated to be 171.34 mA/W and 2.36×1011 Jones, respectively. Moreover, the device showed excellent stability and reliable repeatability. After 2 months, the photoelectric characteristics of the NIRPD hardly degrade in air, attributable to the good stability of the PdSe2. Finally, the PdSe2/GaAs-based heterojunction device can also function as a NIR light sensor.
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通讯作者: 陈斌, bchen63@163.com
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    沈阳化工大学材料科学与工程学院 沈阳 110142

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Fabrication of PdSe2/GaAs Heterojunction for High Iligh/Idark Ratio, Air-Stable Near-Infrared Photovoltaic detector and Image Sensor Application

Abstract: In this study, we have developed a high-sensitivity, near-infrared photodetector (NIRPD) based on PdSe2/GaAs heterojunction, which was made by transferring a multilayered PdSe2 film onto a planar GaAs. The as-fabricated PdSe2/GaAs heterojunction device exhibited obvious photovoltaic behavior to 808 nm illumination, indicating that the NIRPD can be used as a self-driven device without external power supply. Further device analysis showed that the hybrid heterojunction exhibited a high on/off ratio ratio of 1.16×105 measured at 808 nm under zero bias voltage. The responsivity and specific detectivity of photodetector were estimated to be 171.34 mA/W and 2.36×1011 Jones, respectively. Moreover, the device showed excellent stability and reliable repeatability. After 2 months, the photoelectric characteristics of the NIRPD hardly degrade in air, attributable to the good stability of the PdSe2. Finally, the PdSe2/GaAs-based heterojunction device can also function as a NIR light sensor.

Lin-bao Luo, Xiu-xing Zhang, Chen Li, Jia-xiang Li, Xing-yuan Zhao, Zhi-xiang Zhang, Hong-yun Chen, Di Wu, Feng-xia Liang. Fabrication of PdSe2/GaAs Heterojunction for High Iligh/Idark Ratio, Air-Stable Near-Infrared Photovoltaic detector and Image Sensor Application[J]. Chinese Journal of Chemical Physics .
Citation: Lin-bao Luo, Xiu-xing Zhang, Chen Li, Jia-xiang Li, Xing-yuan Zhao, Zhi-xiang Zhang, Hong-yun Chen, Di Wu, Feng-xia Liang. Fabrication of PdSe2/GaAs Heterojunction for High Iligh/Idark Ratio, Air-Stable Near-Infrared Photovoltaic detector and Image Sensor Application[J]. Chinese Journal of Chemical Physics .

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