Algebraic Study of the Vibrational Levels and Potential Energy Surface of the Excited Electronic State (C1A') for S2O

The vibrational levels and potential energy surface of a stable structure for S2O in the excited electronic states C1A' were carried out with algebraic method. The vibrational spectra were obtained (with total quantum number v=20) by fitting 30 spectra data. The fitted rms(root mean square) error based on the Hamiltonian with 9 parameters was 2.40 cm-1. The dissociation energy and force constant were also determined by the analytical potential energy surface. The method is proved to be effective by comparing these results with the experimental data.