Growth and Electronic Properties of Ag Nanoparticles on Reduced CeO_2-x(111) Films

Ag nanoparticles grown on reduced CeO_2-x thin films have been studied by X-ray photoelec-tron spectroscopy and resonant photoelectron spectroscopy of the valence band to understand the effect of oxygen vacancies in the CeO_2-x thin films on the growth and interfacial elec-tronic properties of Ag. Ag grows as three-dimensional particles on the CeO_2-x(111) surface at 300 K. Compared to the fully oxidized ceria substrate surface, Ag favors the growth of smaller particles with a larger particle density on the reduced ceria substrate surface, which can be attributed to the nucleation of Ag on oxygen vacancies. The binding energy of Ag3d increases when the Ag particle size decreases, which is mainly attributed to the final-state screening. The interfacial interaction between Ag and CeO_2-x(111) is weak. The resonant enhancement of the 4f level of Ce³⁺ species in RPES indicates a partial Ce⁴⁺→Ce³⁺ re-duction after Ag deposited on reduced ceria surface. The sintering temperature of Ag on CeO_1.85(111) surface during annealing is a little higher than that of Ag on CeO₂(111) surface, indicating that Ag nanoparticles are more stable on the reduced ceria surface.