First-principle Studies on Enhanced Optical Stability of BaMgAl10O17:Eu2+ Phosphor by SiN Doping
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Graphical Abstract
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Abstract
Using density functional theory, we studied band structure, density of states, optical proper-ties and Mulliken population of the pure and SiN doped BaMgAl10O17:Eu2+(BAM:Eu2+) phosphors. Calculation results showed that the bands of BAM:Eu2+ were of low band en-ergy dispersion, indicating large joint density of states, hence high performance of optical absorption and luminescence. BAM:Eu2+ showed stronger absorption intensity while Eu2+ occupied the BR sites instead of the mO sites. The concentration of Eu2+ at BR sites increased while that at mO sites decreased after Si-N doping. The influence of the vari-ation of Eu2+ distribution on the spectra was stronger than the influence of the decrease of Eu2+ PDOS when SiN concentration was lower than 0.25, therefore the absorption andluminescence intensity of BAM:Eu2+ were enhanced. Mulliken population of Si-N bond was higher than Al-O bond, while that of Eu-N bond was higher than Eu-O bond as well, indicating that Si-N bonds and Eu-N bonds possessed higher covalence than Al-O bonds and Eu-N bonds respectively. The existence of Si-N bonds and Eu-N bonds enhanced the local covalence of Eu2+, hence the optical stability of BAM:Eu2+.
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