Growth and Chemical Thermodynamics Analysis of SiC Film on Si Substrate by Heating Polystyrene/Silica Bilayer Method

SiC films were prepared by modified heating polystyrene/silica bilayer method on Si (111) substrate in normal pressure flowing Ar ambient at 1300 o C. The films were investigated by Fourier transform infrared absorption, X-ray diffraction, and scanning electron microscopy measurements. The chemical thermodynamics process is discussed. The whole reaction can be separated into four steps. The carburizing of SiO is the key step of whole reaction. The main reaction-sequence is figured out based on Gibbs free energy and equilibrium constant. Flowing Ar is necessary to continue the progress of whole reaction by means of carrying out accumulating gaseous resultants. The film is very useful for application in a variety of MOS-based devices for its silica/SiC/Si(111) structure, in which the silica layer can be removed thoroughly by the standard RCA cleaning process.