Surface Structure and Photon Absorption Property of Supported Coupled Semiconductors MoO3-TiO2/SiO2

Solid material of supported coupled semiconductors MoO3-TiO2/SiO2 was prepared by the chemical modification method. BET, XRD, TEM，IR, Raman and UV-Vis DRS experiments were used to characterize the surface structure, photon absorbing and chemisorbing ability of the material. It was shown that there are some extremely small particles of anatase and MoO3 crystallites dispersed well on the surface of SiO2, which also can be coupled each other by the bonds of Ti-O-Mo. The active adsorption sites of the material exist on its surface, according to IR results, and C3H8 can be chemisorbed at the Lewis base sites of the Mo=O bonds to form molecular states. Compared with MoO3 and TiO2, the edge energy of MoO3-TiO2/SiO2 was improved and a significant rise of the photon absorbing intensity is observed, which proves the coupled structure has stronger photon ability to take in the UV light, hold back the recombination of photoexcited electronhole pairs and exhibit the quantum size effects.