Solvothermal Synthesis of SiC Single Crystals

SiC single crystals have been prepared by the method of solvothermal synthesis with a system of SiCl4, CCl4 and metal K in an auto clave. X-ray diffraction (XRD), Raman spectra and transmission electron microscopy(TEM) were used to characterize the products. XRD reveals that the products are SiC crystals and TEM exhibits that SiC single crystal sofwires and platelets are obtained under different usages of metal K. The SiC wires have diameters of 10～20 nm and length up to 1.5μm; the platelets have lateral dimensions of 0.1～3 μm, exhibiting regular polygonal shapes and step-bunched side surface. Furthermore, the growth mechanism of the SiC single crystals is discussed and the effect of super saturation on the crystal growth and morphology is also investigated.