Current Transport Under High Magnetic Fields in Ni/4H-SiC Schottky Barrier

Ni/4H-SiC Schottky contacts with good characteristics were fabricated using electron beam evaporation to deposit Ni on 4H-SiC（（0001）Si face）. Current-voltage（I-V）characteristics of Ni / 4H-SiC Schottky barrier have been studied in the temperature range from 160 K to 300 K in magnetic fields（B）up to 10 T. The thermionic emission theory and relaxation time approximation Boltzmann eqation were employed to calculate the I - V characteristics，and it is found that the change of current shows a linear relation with B2 and V，and is inversely proportional to the temperature，which well agrees with experimental results.