The Photoluminescence Property of Annealed C (Film) /Si ( SiO2 ) ( Nanometer Particles) /C (Film)

A new silicon-based luminescence material-C( F ilm)/S i(S iO,)(nanometer particles)/C ( F ilm) (abbr. C(F)/Si(SiO,)(N)/C(F))is made by sputtering silicon nano-particles on the amorphous carbon film in Ar gas firstly, then depositing amorphous carbon film on silicon nano-particles layer in vacuum. Finally, it has been annealed at 400,650 and 75090 for Ihr espectively. The photoluminescence ( PL) of the sample is tested by fluorescence spectrophotometer. Excited by 250 nm UV-light, the unannealed sample gives a strong PL, band around 398n or( 3.12 e V). After annealed at 6 5090，the sample gives not only PL, band, but also gives another strong PL, band around 360 nor (3.44 eV). The shape and peak position of PL, and PL, are independent on annealing temperature and excited wavelength. On the contrary，the intensities of PL, and PL, are strongly dependent on it; their intensities are the lowest after the sample annealed at 40 0`0 and the highest after annealed at 65090. The shorter the excited wavelen is; the stronger their intensities are. The intensity of PL, band is directly proportional to the ratio of S' 02/S"R elated to the configuration analysis tu01，the sere sultssuggest that the excitation of photonso f PL, band occursin side S iO, nanometerp articles, and the emission of photonscomes from thed effects at the interface between SiO, and Si. PL, band is due to electron-hole recombination inside SiC manometer particles.