Study of Thin Poly-hexamethyladisiloxane Films Deposited with R.f.Plasma with XPS

Thin poly-hexamethyladisiloxane films on deposited polyster film substrate were successfully prepared with CVD method in a R.F. plasma polymerizing apparatus. Elemental oxygen erosion resistance of the films was measured in an equipment simulated the elemental oxygen environments and the property was good. The films can protect the material surface of the apparatus in space. Property of the films related to the loss of oxygen in the film preparation and deposited density of the films that was tested by AFM was not uniform. Functional groups structure and surface chemical state of the films, which were prepared under different processing parameters were investigated by using XPS in present work in order to obtain films that had good elemental oxygen erosion resistance