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    Ran Yangqiang, Zheng Ruilun, Chen Hong, Ping Ronggang, Lu Yi. Simulation of the Roughening Law for Mo2C Film Surface[J]. Chinese Journal of Chemical Physics , 2000, 13(4): 461-467. DOI: 10.1088/1674-0068/13/4/461-467
    Citation: Ran Yangqiang, Zheng Ruilun, Chen Hong, Ping Ronggang, Lu Yi. Simulation of the Roughening Law for Mo2C Film Surface[J]. Chinese Journal of Chemical Physics , 2000, 13(4): 461-467. DOI: 10.1088/1674-0068/13/4/461-467

    Simulation of the Roughening Law for Mo2C Film Surface

    • The roughening physics model of Mo2C film surface is improved by introduction the crystalin boundary.The DT2 model is extended by including the temperature.The surface of thin Mo2C film is simulated in computer and the hight of difference distribution is given by means of statistics.The change of roughness with deposited time and temperature is determined.The obtained results show that,the agreement with experimental date is improved by crystalline boundary.The roughening of Mo2C film is rapid roughening and the rougheness increase with increasing the substrate temperature rapidly.
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