Ultrafast Dynamics of Defect-Assisted Carrier Capture in MoS₂ Nanodots Investigated by Transient Absorption Spectroscopy

MoS₂ nanodots are emerging as promising semiconductor materials for optoelectronic devices. However, most of the recent attention is focused on the fabrication of MoS₂ nanodots, and the survey for exciton dynamics of MoS₂ nanodots remains less explored. Herein, we use femtosecond transient absorption spectroscopy to investigate the carrier dynamics of MoS₂ nanodots. Our results show that defect-assisted carrier recombination processes are well consistent with the observed dynamics. The photo-excited carriers are captured by defects with at least two different capture rates via Auger scattering. Four processes are deemed to take part in the carrier relaxation. After photoexcitation, carrier cooling occurs instantly within ~0.5 ps. Then most of carriers are fast captured by the defects, and the corresponding time constant increases from ~4.9 ps to ~9.2 ps with increasing pump fluence, which may be interpreted by saturation of the defect states. Next a small quantity of carriers is captured by the other kinds of defects with a relatively slow carrier capture time within ~65 ps. Finally, the remaining small fraction of carriers relaxes via direct interband electron-hole recombination within ~1 ns. Our results may lead to deep insight into the fundamentals of carrier dynamics in MoS₂ nanodots, paving the way for their further applications.