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    Bin Huang, Bi-bo Chen, Rong Chen. Predicting H2S Oxidative Dehydrogenation over Graphene Oxides from First Principles[J]. Chinese Journal of Chemical Physics , 2015, 28(2): 143-149. DOI: 10.1063/1674-0068/28/cjcp1410187
    Citation: Bin Huang, Bi-bo Chen, Rong Chen. Predicting H2S Oxidative Dehydrogenation over Graphene Oxides from First Principles[J]. Chinese Journal of Chemical Physics , 2015, 28(2): 143-149. DOI: 10.1063/1674-0068/28/cjcp1410187

    Predicting H2S Oxidative Dehydrogenation over Graphene Oxides from First Principles

    • Spin-polarized periodic density functional theory was performed to characterize H2S adsorption and dissociation on graphene oxides (GO) surface. The comprehensive reaction network of H2S oxidation with epoxy and hydroxyl groups of GO was discussed. It is shown that the reduction reaction is mainly governed by epoxide ring opening and hydroxyl hydrogenation which is initiated by H transfer from H2S or its derivatives. Furthermore, the presence of another OH group at the opposite side relative to the adsorbed H2S activates the oxygen group to facilitate epoxide ring opening and hydroxyl hydrogenation. For H2S interaction with -O and -OH groups adsorption on each side of graphene, the pathway is a favorable reaction path by the introduction of intermediate states, the predicted energy barriers are 3.2 and 10.4 kcal/mol, respectively, the second H transfer is the rate-determining step in the whole reaction process. In addition, our calculations suggest that both epoxy and hydroxyl groups can enhance the binding of S to the C-C bonds and the effect of hydroxyl group is more local than that of the epoxy.
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