Temperature-Dependent Electrical Conductance of Bi Nanowires

The single crystal bismuth nanowire arrays grown along 0112 with the diameter of 30 nm was synthesized in the pore of anodic aluminum oxide templates through electrodeposi-tion process. The temperature dependent electric conductance of Bi nanowire arrays was measured from 78 K to 320 K. We found that the semimetal-to-semiconductor transition happened around 230 K for 30 nm Bi nanowires oriented along 01112 and the electric con-ductance of the nanowires had a strong temperature dependence.