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Zheng-bo Qin, Xia Wu, Zi-chao Tang. Design Near-threshold Photoelectron Imaging Spectrometer Based on UV Laser Induced Photoelectron Emission Anion Source (cited: 2)[J]. Chinese Journal of Chemical Physics , 2013, 26(6): 774-779. DOI: 10.1063/1674-0068/26/06/774-779
Citation: Zheng-bo Qin, Xia Wu, Zi-chao Tang. Design Near-threshold Photoelectron Imaging Spectrometer Based on UV Laser Induced Photoelectron Emission Anion Source (cited: 2)[J]. Chinese Journal of Chemical Physics , 2013, 26(6): 774-779. DOI: 10.1063/1674-0068/26/06/774-779

Design Near-threshold Photoelectron Imaging Spectrometer Based on UV Laser Induced Photoelectron Emission Anion Source (cited: 2)

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  • We have developed a compact photoelectron imaging facility, including an anion source with dissociative photoelectron attachment to molecules, a linear time-of-flight mass spec-trometry (TOFMS), and an orthogonal high-resolution threshold photoelectron velocity mapimaging spectrometer (VMI). Intense and cold cluster anions were prepared in photoelectron-attachment processes upon pulsed UV laser ablation of metal target. Combining this anion source with TOFMS-VMI, the achieved mass resolution is about 200, and the electron ki-netic energy resolution is better than 3%, i.e., 30 meV for 1 eV electrons. More importantly, low-energy photoelectron imaging spectra for CH3S- and S2- at 611.46 nm are obtained. In both cases, the refined electron a±nities are determined to be 1.8626±0.0020 eV for CH3S and 1.6744§±0.0035 eV for S2, respectively. Preliminary results suggest that the apparatus is a powerful tool for estimating precise electron affinities values from threshold photoelectron imaging spectroscopy
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